Abstract
A 2-D compact analytical model for the device potential of double metal double gate hetero-oxide Tunnel FET (DM DG Hetero-oxide TFET) has been developed in this work. The hetero-oxide (HfO2 + SiO2) and the double metal double gate allows improvement in current in the ON state of TFET as well as suppresses the ambipolar current in TFET curtailing both the limitations of TFET. Parabolic approximation method with required boundary conditions has been utilized to solve Poisson’s equation. Depletion region plays vital role in altering the potential of device in its proximity. Therefore, the depletion regions at drain and source are also considered for the modeling of the device. For this the effect of fringing field has been considered using the technique of conformal mapping in the depletion regions. The incorporation of the depletion region in potential modeling allows a precise modeling of the potential near channel-drain and source-channel junctions. The model results considering source and drain depletion region shows better match with simulation results. Validation of proposed model has done against simulation data using ATLAS TCAD SILVACO software. The compact analytical model developed here is found to have good agreement with the simulation framework.
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Authors are thankful to National Institute of Technology, Patna for granting the computational resources.
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Kumari Nibha Priyadarshani has developed the model and the computational framework. Sangeeta Singh has devised the idea, helped while preparing the final draft and supervised.
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Priyadarshani, K.N., Singh, S. Double Metal Double Gate Hetero-oxide Tunnel FET: An Analytical Model. Silicon 14, 7017–7024 (2022). https://doi.org/10.1007/s12633-021-01476-8
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DOI: https://doi.org/10.1007/s12633-021-01476-8