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Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

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Abstract

In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO2 devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si–SiO2 substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation–reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device’s usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric I–V properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.

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Acknowledgements

The authors extend their appreciation to Taif University, Saudi Arabia, for supporting this work through project number (TU-DSPP-2024-59).

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Authors and Affiliations

  1. National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, UAE

    Naveed Ur Rehman & Rajwali Khan

  2. Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan

    Naveed Ur Rehman, Rajwali Khan, Nasir Rahman, Aziz Ullah & Mohammad Sohail

  3. Centre for Advance Materials Research, University of Sharjah, Sharjah, 27272, UAE

    Iftikhar Ahmad

  4. Department of Physics, University of Wisconsin, La Crosse, WI, USA

    Shahid Iqbal

  5. Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944, Taif, Saudi Arabia

    Khaled Althubeiti

  6. Department of Electrical Engineering, College of Engineering Taif University, P.O. Box11099, 21944, Taif, Saudi Arabia

    Sattam Al Otaibi

  7. Researcher, Faculty of Chemical Engineering, New Uzbekistan University, Tashkent, Uzbekistan

    Nizomiddin Juraev

  8. Scientific and Innovation Department, Tashkent State Pedagogical University, Tashkent, Uzbekistan

    Nizomiddin Juraev

  9. Department of Physics, University of Poonch Rawalakot, Rawalakot, Pakistan

    Akif Safeen

  10. Department of Chemistry, Quaid-i-Azam University, Islamabad, 45320, Pakistan

    Ziaur Rehman

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  1. Naveed Ur Rehman
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Contributions

Naveed Ur Rehman, Aziz Ullah, Nasir Rahman, Ziaur Rehman, Mohammad Sohail, Shahid Iqbal, Khaled Althubeiti, Sattam Al Otaibi and Rajwali Khan: performed the experiment and wrote the original paper. Naveed Ur Rehman, Aziz Ullah, Nasir Rahman, Mohammad Sohail, Sattam Al Otaibi, and Rajwali Khan: discussed the results and implications. Khaled Althubeiti and Rajwali Khan: performed and analyzed the XRD spectrum. All authors commented on and approved the final version of the manuscript. Finally, Akif Safeen, Nizomiddin Juraev and Sattam Al Otaibi has successfully helped and guides us in comments addressing and removing grammatical errors.

Corresponding authors

Correspondence to Rajwali Khan, Nasir Rahman or Ziaur Rehman.

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Rehman, N.U., Khan, R., Rahman, N. et al. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies. J Mater Sci: Mater Electron 35, 1557 (2024). https://doi.org/10.1007/s10854-024-13318-5

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