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Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

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Abstract

This paper presents the synthesis and characterization of cobalt and manganese co-doped zinc oxide (ZnO) ferromagnetic nanoparticles via a chemical precipitation technique. X-ray diffraction (XRD) analysis confirms the wurtzite-type order of the nanoparticles, with cobalt and manganese ions replacing zinc ions at tetrahedral sites. The nanoparticles exhibit ferromagnetic behavior below 400 K, supported by negative Curie–Weiss constants, suggesting the presence of spinel-type impurity phases or intrinsic features of the doped samples. Additionally, the study explores the resistive switching characteristics of ferromagnetic memristors fabricated using sputtering procedures, incorporating 1% co-doped ZnO layers between Pt and Ag electrodes. The memristors demonstrate robust analog resistance switching over 80 cycles, with precise voltage control. Augmented grain volume and oxygen vacancies in the doped ZnO layers indicate grain growth, reducing grain boundaries and enhancing electrical response. Further investigation reveals asymmetrical resistance switching behavior, attributed to underlying electrochemical processes within the devices. Statistical analysis demonstrates consistent resistive switching over numerous pulse cycles at room temperature, highlighting exceptional thermal stability. The switching mechanism is elucidated by the migration of Ag ions during the “set” process, forming conductive pathways, and filament rupture during the “reset” process. Current–voltage (I–V) curves suggest space-charge limited current, indicating the creation of conductive filaments. The study showcases the ability to precisely modulate resistance in response to different voltages, presenting the potential of the memristors as neuromemristive systems for biological synapses.

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Data availability

On reasonable request, the corresponding author will make available the datasets used and/or created during this investigation. The experimental work and language of the manuscript are also unique. There was no evidence of plagiarism in the submitted manuscript. If the reviewer insists on seeing the evidence, we would gladly deliver it to them in a plagiarized form. The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors extend their appreciation to Taif University, Saudi Arabia, for supporting this work through project number (TU-DSPP-2024-59).

Funding

This research was funded by Taif university, SaudiArabia, Project No. TU-DSPP-2024–59.

Author information

Author notes

  1. Muhammad Faisal Hayat and Naveed Ur Rahman have contributed equally to this artilces.

Authors and Affiliations

  1. Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah, Nasir Rahman, Mohammad Sohail & Rajwali Khan

  2. Department of Physics, University of Wisconsin, La Crosse, WI, USA

    Shahid Iqbal

  3. School of Medicine, Yale University, 333 Cedar Street, New Haven, CT, 06510, USA

    Alamzeb Khan

  4. Faculty of Chemical Engineering, New Uzbekistan University, Tashkent, Uzbekistan

    Sherzod Abdullaev

  5. Scientific and Innovation Department, Tashkent State Pedagogical University named after Nizami, Tashkent, Uzbekistan

    Sherzod Abdullaev

  6. Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944, Taif, Saudi Arabia

    Khaled Althubeiti

  7. Department of Electrical Engineering, College of Engineering Taif University, P.O. Box11099, 21944, Taif, Saudi Arabia

    Sattam AlOtaibi

  8. Department of Physics, United Arab Emirates University, 15551, Al Ain, United Arab Emirates

    Rajwali Khan

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  1. Muhammad Faisal Hayat
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Contributions

This paper was written and revised collaboratively, Naveed Ur Rahman, Muhammad Faisal Hayat, Aziz Ullah, Nasir Rahman, Mohammad Sohail, Shahid Iqbal, Alamzeb Khan, Sherzod Abdullaev, Khaled Althubeiti, Sattam Alotaibi and Rajwali Khan created the idea and submitted the paper. All authors equally contributed to this article.

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Correspondence to Rajwali Khan.

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Hayat, M.F., Rahman, N.U., Ullah, A. et al. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing. J Mater Sci: Mater Electron 35, 1052 (2024). https://doi.org/10.1007/s10854-024-12790-3

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