Abstract
The utilization of dip coating methods enabled the preparation of thin films of copper-doped cadmium selenide. Notably, improvements in cadmium selenide properties were observed with varying dopant compositions, ranging from 0.01 to 1.0 mol%. As the amount of copper increased, the colour of the film darkened, reaching its maximum thickness at 0.1 mol%. Crystallographic studies unveiled a hexagonal system for all compositions. Various parameters were determined and found to be optimized for 0.1 mol%. The optical studies, which were examined using spectrophotometer and PL techniques, revealed a nonlinear increase in optical density as the copper content increased to 0.1 mol%. Additionally, Scanning Electron Microscopy illustrated that grain sizes initially increased with copper content up to 0.1 mol%, then decrease. Furthermore, Atomic Absorption Spectroscopy confirmed the stoichiometric accuracy of the prepared thin films and it found that materials have nearly stoichiometric. Regarding electrical properties, conductance at 300 K showed enhancement with increasing copper content up to 0.1 mol%, followed by a decrease. Moreover, copper-doped CdSe samples exhibited p-type conductivity, while mobility improved with copper content up to 0.1 mol%. The crystallographic, opto-electrical and thermoelectric performance of Cu doped cadmium selenide thin films are examined in detail through these comprehensive studies to gain a deeper understanding. This knowledge is necessary for optimizing the material’s properties for different uses, such as photoelectrics, light-emitting diodes, and thermoelectric energy conversion devices.
Similar content being viewed by others
Data availability
The manuscript has no associated data.
References
A. Himanshu, G. Chasta, D. Suthar, A. Thakur, M. Kannan, M. Dhaka, Mater. Res. Bull. 152, 11845 (2022)
O.I. Olusola, O.K. Echendu, I.M. Dharmadasa, J. Mater. Sci. 26, 1066 (2014)
L. Zhao, L. Hu, X. Fang, Adv. Funct. Mater. 22, 1551 (2012)
M. Hassen, R. Riahi, F. Laatar, H. Ezzaouia, Surf. Interfaces 18, 100408 (2020)
J. Abbas, L. Tann, M. Uonis, Chalcogenide Lett. 20, 883 (2023)
D. Yan, D. Xu, J. Li, Y. Wang, F. Liang, J. Wang, C. Yan, H. Liu, J. Shi, L. Tang, Y. He, K. Zhong, Z. Lin, Y. Zhang, H. Cheng, W. Shi, J. Yao, Y. Wu, Opt. Mater. 78, 484 (2018)
R. Choudhary, R. Chauhan, J. Mater. Sci. 30, 5753 (2019)
W. Jin, X. Mu, K. Zhang, Z. Shang, L. Dai, Phys. Chem. Chem. Phys. 20, 19932 (2018)
B. Marker, J. Hiller, F. Wackenhut, K. Braun, A. Meixner, M. Scheele, J. Chem. Phys. 151, 141102 (2019)
N. Shelke, S. Karle, B. Karche, J. Mater. Sci. 31, 15061 (2020)
W. Ming-Chung, C. Kao, T. Lin, S. Chan, C. Lin, Y. Huang, Z. Zhou, K. Wang, C. Lai, Sens. Actuators B 309, 127760 (2020)
P. Jae, K. Lee, G. Lim, H. Seo, S. Kim, M. Kim, Y. Yi, H. Lee, D. Son, Org. Electron. 2020, 105707 (2020)
N. Rathee, N. Jaggi, Vacuum 169, 108910 (2019)
M. Santhosh, K. Bangera, G. Shivakumar, Mater. Sci. Semicond. Process. 68, 114 (2017)
Z. Ahed, N. Abdul-Rahman, G. Campet, D. Park, H. Kwon, T. Kim, H. Choi, M. Helal, H.J. Hilal, J. Electroanal. Chem. 774, 7–13 (2016)
S. Devi, S. Nath, B. Sharma, R. London, Chalcogenide Lett. 15, 639 (2018)
H. Rosly, K. Rahman, M. Harif, Y. Yusoff, A. Wafi, M. Matin, S. Fazlili, N. Amin, Test Eng. Manag. 81, 5647 (2019)
R. Dutta, N. Neog, Mater. Today 42, 893 (2021)
R. Bai, S. Chaudhary, D. Pandya, AIP Conf. Proc. 2220, 020044 (2020)
A. Abdulwahab, A. Al-Adhreai, A. Ahmed, Optik 236, 166659 (2021)
P. Chate, P. Hankare, D. Sathe, J. Alloys Compd. 505, 259 (2010)
T. Mahalingam, R. Mariappan, V. Dhanasekaran, S. Mohan, G. Ravi, J. Chu, Chalcogenide Lett. 7, 669 (2010)
S. Thanikaikarasan, K. Sundaram, T. Mahalingam, S. Velumani, J. Rhee, Mater. Sci. Eng. B 174, 242 (2010)
R. Pawar, R. Bhavsar, S. Sonawane, Indian J. Phys. 86, 871 (2012)
J. Singh, N. Verma, Bull. Mater. Sci. 37, 541 (2014)
K. Pathak, M. Pateria, K. Deshmukh, P. Jha, Mater. Sci. 37, 33 (2019)
R. Sahebi, M. Roknabadi, M. Behdani, Mater. Res. Exp. 6, 126453 (2020)
H. Kafashan, Z. Orshesh, A. Bahrami, F. Zakerian, Physica B 675, 415623 (2024)
M. Noroozi, G. Jayakumar, K. Zahmatkesh, J. Lu, L. Hultman, M. Mensi, S. Marcinkevicius, B. Hamawandi, M. Tafti, A. Ergül, Z. Ikonic, M. Toprak, H. Radamson, ECS J. Solid State Sci. Technol. 6, Q114 (2017)
S. Tanuslip, K. Kurosaki, Materials 12, 1943 (2019)
K. Sharma, A. Al-Kabbi, G. Saini, S.J. Tripathi, Alloy Compd. 540, 198 (2012)
P. Chate, V. Bhabad, Int. J. Thin Films Sci. Technol. 5, 163 (2016)
P. Chate, D. Sathe, S. Hake, Appl. Phys. A 128, 904 (2022)
G. Amiri, S. Fatahian, S. Mahmoudi, Mater. Sci. Appl. 4, 134 (2013)
P. Khanna, C. Morley, R. Gorte, R. Gokhale, V. Subbarao, C. Satyanaryana, Mater. Chem. Phys. 83, 323 (2004)
P. Chate, D. Sathe, D. Lakade, V. Bhabad, J. Alloys Compd. 525(5), 40 (2013)
O. Kopp, O. Cavin, J. Cryst. Growth 67, 391 (1984)
E. Fawade, Um-Salma Sci. J. 3, 180 (2006)
H. Afify, I. Zawawi, I. Battrisha, J. Mater. Sci. 10, 497 (1999)
P. Reyes, S. Veluman, Mater. Sci. Eng. B 177, 1452 (2012)
S. Wageh, A. Ghamandi, A. Zahrani, H. Driss, Mat. Res. Exp. 6, 0850 (2019)
P. Hankare, B. Jadhav, P. Chate, D. Sathe, I. Mulla, J. Alloys Compd. 509, 2948 (2011)
K. Ramaiah, Y. Su, S. Chang, F. Juang, K. Ohdaira, Y. Shiraki, H. Liu, I. Chen, A.J. Bhatnagar, J. Cryst. Growth 224, 74 (2001)
J. Hargreaves, Catal. Struct. React. 2, 33 (2016)
P. Chate, V. Bhabad, Int. J. Modern Trends Sci. Technol. 2, 6 (2016)
H. Radamson, A. Hallen, I. Sychugov, A. Azarov, Analytical Methods and Instruments for Micro-and Nanomaterials (Springer, Cham, 2023)
J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi (b) 15, 627 (1966)
S. Singh, M. Limaye, N. Lalla, S. Kulkarni, J. Lumin. 128, 1909 (2008)
S. Mogar, M. Mahesha, Micro Nanosturct. 168, 207335 (2022)
R. Meulenberg, T. Buuren, K. Hanif, T. Willey, G. Strouse, L. Terminello, Nano Lett. 4, 2277 (2004)
P. Chate, D. Sathe, P. Hankare, U. Sankpal, J. Mater. Sci. 24, 2000 (2013)
V. Bhide, S. Salkalachen, A. Rastogi, C. Rao, M. Hegde, J. Phys. D 14, 1647 (1981)
P. Hankare, P. Chate, D. Sathe, Physica B 404(16), 2389 (2009)
J. Kaur, R. Kaur, S. Tripathi, Acta Metall. Sin. 32, 541 (2019)
E. Al-Fwadi, M.M. Al-Alias, F. Al-Shaikley, Iraqi J. Phys. 5, 63 (2008)
B. Ray, II-VI Compounds (Pergman Press, Edinburgh, 1969)
I. Ture, M. Claybourn, A. Brinkman, J.J. Woods, Cryst. Growth 72, 189 (1982)
I. Ermolovich, A. Paveletes, L. Khanat, Thin Solid Films 143, 225 (1986)
P. Chate, S. Lakde, D. Sathe, Optik 250, 168296 (2022)
Author information
Authors and Affiliations
Contributions
P. A. Chate: conceptualization, methodology, review and editing. D. J. Sathe: writing an original draft, data collection, supervision. V. D. Bhabad: characterization of X-ray diffraction, scanning electron micrograph.
Corresponding authors
Ethics declarations
Conflicts of interest
The authors have no relevant financial or non-financial interests to disclose.
Ethical approval
The submitted work should be original and should not have been published elsewhere.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Chate, P.A., Sathe, D.J. & Bhabad, V.D. Multifaceted analysis of copper-doped cadmium selenide thin films: exploring crystallography data, opto-electrical properties, and thermoelectric power. J Mater Sci: Mater Electron 35, 1305 (2024). https://doi.org/10.1007/s10854-024-13068-4
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-024-13068-4