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Exploring mechanism of suppressing void formation at Interface of Sn–9Zn and Cu

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Abstract

This study investigated the effects of solid-state aging on Sn–3Ag–0.5Cu (SAC305) and Sn–9Zn (SZ) solder joints with two Cu electroplated layers: PC-Cu and PCS-Cu. Distinct surface features and impurity levels were evident in PC-Cu and PCS-Cu owing to the use of different additives in the electroplating solutions. The SAC305 solder joints exhibited notable voids and cracks at the joint interface during aging, which were attributed to the high impurity content of PC-Cu. In contrast, low-impurity PCS-Cu did not exhibit void formation. Regardless of whether PC-Cu or PCS-Cu was used, no interfacial voids were observed in the SZ solder joints, implying that the SZ solder effectively suppressed voids. Mechanisms related to void suppression were also proposed. The presence of Zn in the solder changed the interfacial reactions, forming a Cu5Zn8 intermetallic compound (IMC) in addition to the Cu–Sn IMCs in the SAC305 solder joints. Inhibited grain-boundary diffusion in high-impurity scenarios hinders voids owing to the effective substitution of Cu vacancies by Zn. With Zn consumption near the soldering interface, the Cu5Zn8 IMC detached and a Cu6Sn5 phase was formed between the Cu–Zn IMC and Cu. Meanwhile, PCS-Cu exhibited localized Cu6Sn5 growth. In addition, SZ showed less influence of Cu impurities on the interfacial IMC thickness compared to SAC/PC-Cu with rapid IMC growth. The findings revealed the void formation mechanisms and highlighted the void-suppressing features of SZ in solder joints.

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Acknowledgements

We appreciate the support for the Ultra HR SEM at the National Yang Ming Chiao Tung University Instrument Resource Center (EM002800) under Project MOST 111-2731-M-A49-001.

Funding

Yu-An Shen thanks the National Science and Technology Council for Project 112-2221-E-035-022. Chih-Ming Chen would like to thank the National Science and Technology Council for Project 110-2221-E-005-006-MY3.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Rd, Seatwen, Taichung, 407, Taiwan

    Yu-An Shen

  2. Department of Chemical Engineering, National Chung Hsing University, 145 Xingda Rd., South Dist, Taichung, 402, Taiwan

    Chan-Ying Lin & Chih-Ming Chen

Authors
  1. Yu-An Shen
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  2. Chan-Ying Lin
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  3. Chih-Ming Chen
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Contributions

YA Shen: validation, formal analysis, investigation, data curation, writing—original draft, writing—review & editing, project administration, funding acquisition, supervision, and project administration. C-Y Lin: validation, formal analysis, investigation, data curation. C-M Chen: validation, investigation, writing—original draft, writing—review & editing, project administration, funding acquisition, supervision, project administration.

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Correspondence to Yu-An Shen or Chih-Ming Chen.

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Shen, YA., Lin, CY. & Chen, CM. Exploring mechanism of suppressing void formation at Interface of Sn–9Zn and Cu. J Mater Sci: Mater Electron 35, 778 (2024). https://doi.org/10.1007/s10854-024-12558-9

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  • DOI: https://doi.org/10.1007/s10854-024-12558-9

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