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Effect of expelling P content on Ni(P) dissolution and reaction with SnAgCu(Ni)

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Abstract

The present work studied the crystallinity effecting of Ni(P) layer on the interfacial reaction between SAC1205-0.05Ni solder and electroless-Ni(P)/electroless-Pd(P)/immersion-Au (ENEPIG) surface finish. By TEM analysis, two different Ni(P) crystallinities in ENEPIG surface finishes were confirmed, which are (1) nano-crystalline/amorphous and (2) polycrystalline microstructures. In the reflowing process, the actual Ni content in the molten solder is found to be dominated by the Ni(P) dissolution. Interestingly, we found that the Ni(P) dissolution of the Ni(P) layer with nano-crystalline/amorphous microstructure into the molten SAC1205-0.05Ni solder is less than that of the Ni(P) layer with a polycrystalline microstructure. We believe that the P content expelled from the Ni(P) layers would reside on the Ni(P) layer, which retards and defines the Ni(P) dissolution. Therefore, comparing to the Ni(P) layer with polycrystalline microstructure, more residual P would reside on the Ni(P) layer surface with nano-crystalline/amorphous, which would impede Ni(P) dissolution and Ni(P) consumption. Moreover, the phase and morphology of interfacial compound phase are greatly affected by the Ni amount in the molten SAC1205-0.05Ni solder. The more Ni content in the molten solder causes a high Ni content in the ternary (Cu,Ni)6Sn5 compound formed at the interface. Higher Ni content in the interfacial compound would convert needle-like (Cu,Ni)6Sn5 compound phase to long hollowed prismatic (Cu,Ni)6Sn5 rods.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was mainly supported by Siliconware Precision Industries Co., Ltd. and Ministry of Science and Technology (MOST) of Taiwan under the projects of 111-2221-E-008-084-MY3.The authors specially thank Instrumentation Center at National Tsing Hua University (NTHU), TOF-SIMS and High-resolution analytical instrumentation center at National Central University (NCU) for assistance.

Funding

The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Cheng–Yi Liu reports financial support was provided by National Science and Technology Council. (Number: 111–2221-E-008–084-MY3).

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, National Central University, No. 300, Jhongda Rd., Jhongli District, Taoyuan, 32001, Taiwan, R.O.C.

    Ya-Hui Hsu, Mei-Hsin Lo, Yu-Chun Lee, Wei-Chieh Huang, Jui-Sheng Chang & Cheng-Yi Liu

  2. Corporate R & D/Siliconware Precision Industries Co., Ltd. (SPIL), Taichung, Taiwan

    Yu-Po Wang

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Contributions

Ya-Hui Hsu contributed toward conceptualization and methodology. Mei-Hsin Lo contributed toward investigation and Resources. Yu-Chun Lee contributed toward writing-original draft. Wei-Chieh Huang contributed toward data curation. Jui-Sheng Chang contributed toward investigation. Yu-Po Wang contributed toward visualization and supervision. Cheng-Yi Liu contributed toward supervision, project administration, and funding acquisition.

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Correspondence to Cheng-Yi Liu.

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Hsu, YH., Lo, MH., Lee, YC. et al. Effect of expelling P content on Ni(P) dissolution and reaction with SnAgCu(Ni). J Mater Sci: Mater Electron 35, 678 (2024). https://doi.org/10.1007/s10854-024-12391-0

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