Keywords

1 Introduction

In the modern society, there has been always demand for uninterrupted communication, fast computation, and high-quality entertainment with smaller electronic gadgets. MOSFETs are the backbone of these gadgets. Shrinking dimensions of MOS help to incorporate more features in a single chip, but at the same time due to shrinking in MOS dimensions the phenomena of short channel effects (SCEs) such as subthreshold characteristic, reduction in carrier’s mobility, and gate tunneling currents come in the picture. However, the SCEs can be decimated through modification in MOS design.

Multigate devices [1,2,3,4,5,6] designs like FinFET, Omega FET, and gate-all-around (GAA) are analyzed over different parameters. The GAA MOSFET [6, 7] is becoming a cornerstone due to multidirectional electrostatic control over the gate, superior SCE immunity, and high packing density. In smaller-scaled devices, if the voltage at the drain is expanded, the potential barrier in the channel minimizes, which indicates that the gate loses its control over the channel, overseeing drain-induced barrier lowering (DIBL). This impact is due to the potential distribution from the source/drain region. However, GAA suffers from the low drive current [8]. To overcome the low drive current, the high mobility material In0.53Ga0.47As is used to fabricate the GAA [9], which enhances the working speed at a reduced supply voltage. In0.53Ga0.47As-based gate GAA MOSFET provides a boost in drive current, excellent immunity to SCEs, enhanced gate-channel electrostatic, and high carrier mobility [10, 11]. Various materials appeared into consideration, among which indium–gallium–arsenide (InGaAs) is one of the considerably focused materials. In conclusion to the works mentioned above, it can be summarized that with reducing dimensions, In0.53Ga0.47As-GAA MOS is a fruitful solution for superior computational speed.

In this work, the performance of Si-GAA and In0.53Ga0.47As-GAA has been compared. Comparison of Si-GAA and In0.53Ga0.47As-GAA devices has been made in terms of variation in OFF-state current (IOFF), ON–OFF-current ratio (ION/IOFF), subthreshold swing (SS), drain-induced barrier lowering (DIBL), trans-conductance (gm), and trans-conductance generation factor (TGF) characteristics on ATLAS, a three-dimensional (3D) device simulator from SILVACO.

2 Device Structure and Simulation Approach

The 3D schematics structure of In0.53Ga0.47As-GAA MOSFET for simulation is shown in Fig. 1. The cross-sectional view of In0.53Ga0.47As-GAA MOSFET is shown in Fig. 2. A thin Al2O3 oxide layer wraps over the nanowire channel region. Table 1 shows the device parameters used for simulation. The following models of 3D ATLAS device simulator from SILVACO have been included to perform the simulation of the proposed In0.53Ga0.47As-GAA device and Si-GAA devices [12], like drift diffusion charge transport model, Lombardi (CVT) model, concentration-dependent mobility model, and Shockley–Real–Hall (SRH) model.

Fig. 1
figure 1

3D schematics structure design of In0.53Ga0.47As-GAA MOSFET

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Fig. 2.
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2D cross-sectional view of In0.53Ga0.47As-GAA MOSFET

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Table 1 Silicon and In0.53Ga0.47As-based device parameters used for GAA MOSFETs simulation
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3 Results and Discussion

Figure 3 presents the potential of In0.53Ga0.47As-GAA MOSFET at VGS = 0 V and VDS = 0 V. The plot indicates the lowest central surface potential, and it demonstrates the gate controllability over the channel region. Figure 4 shows the comparison of drain current (ID) of In0.53Ga0.47As-GAA and Si-GAA MOSFET as a function of gate-to-source voltage (VGS) at a drain-to-source voltage (VDS) = 1 V. The improvement of ION and IOFF is analyzed in In0.53Ga0.47As-GAA MOSFET, as shown in Fig. 4. The ON-current is enhanced by 59.62%, but the OFF-current reduces by 84% of In0.53Ga0.47As-GAA MOSFET compared to Si-GAA MOSFET. It has occurred due to the high mobility material In0.53Ga0.47As of the device channel with high gate oxide Al2O3. Hence, the In0.53Ga0.47As-GAA MOSFET is more satisfactory for high-speed switching applications and also low power consumption.

Fig. 3
figure 3

The cross-sectional contour plot of potential for In0.53Ga0.47As-GAA MOSFET at VGS = VDS = 0 V

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Fig. 4
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Variation of drain current (ID) of Si-GAA and In0.53Ga0.47As-GAA MOSFET versus VGS at VDS = 1 V

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Figure 5 shows the comparison of drain current of In0.53Ga0.47As-GAA and Si-GAA MOSFET with VDS at VGS = 1 V. The improvement of drain current in In0.53Ga0.47As-GAA MOSFET from characteristics of the InGaAs is because the In0.53Ga0.47As has higher mobility than silicon. The comparison between trans-conductance (gm) of In0.53Ga0.47As-GAA and Si-GAA MOSFET against VGS at VDS = 1 V is illustrated in Fig. 6. The gm is a crucial factor for analog and RF applications, and it is moreover essential to define an optimum bias point. For any device, the cut-off frequency is the peak at an optimum bias point. The graph displays that the In0.53Ga0.47As-GAA device discloses 53.33% more distinguished gm than the Si-GAA MOSFET.

Fig. 5
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Variation of drain current of Si-GAA and In0.53Ga0.47As-GAA MOSFET versus VDS at VGS = 1 V

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Fig. 6
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Variation of trans-conductance (gm) of Si-GAA and In0.53Ga0.47As-GAA MOSFET versus VGS at VDS = 1 V

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Figure 7 illustrates the comparison of TGF (gm/ID) of In0.53Ga0.47As-GAA and Si-GAA MOSFET against VGS at VDS = 1 V. The measurement of gm and ID is recognized as the trans-conductance generation factor (TGF). The highest TGF value is near the ideal amount of subthreshold swing 60 mV/decade. In the subthreshold region, TGF is vital for In0.53Ga0.47As-GAA MOSFET than the Si-GAA device. The more profitable value of TGF confirms the stable performance of the analog circuit even for low power supply.

Fig. 7
figure 7

Variation of TGF (gm/ID) of Si-GAA and In0.53Ga0.47As-GAA MOSFET versus VGS at VDS = 1 V

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Table 2 indicates the analog FOMs of Si-GAA and In0.53Ga0.47As-GAA MOSFET at VDS = 1.0 at a constant threshold voltage. Table 2 shows that the In0.53Ga0.47As-GAA device is organized adequately for analog/RF performance compared to Si-GAA MOSFET. The ON-current ~ 59.62%, gm ~ 53.33%, and TGF ~ 16.12% of In0.53Ga0.47As-GAA devices are higher than the Si-GAA device. However, the In0.53Ga0.47As-GAA MOSFET performance parameters such as OFF-current (IOFF) with ~ 84%, subthreshold swing (SS) ~ 8.19%, and DIBL are decreased compared to Si-GAA MOSFET.

Table 2 Analog FOMs of Si-GAA and In0.53Ga0.47As-GAA MOSFET at VDS = 1.0 at a constant threshold voltage
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4 Conclusion

In this paper, the performance investigation of In0.53Ga0.47As-GAA MOSFET has been carried out and compared with the Si-GAA MOSFET for same parameters. Both devices are simulated using a 3D ATLAS TCAD device simulator from SILVACO. The In0.53Ga0.47As-GAA MOSFET has revealed much upgraded performance compared to Si-GAA MOSFET. The In0.53Ga0.47As-GAA MOSFET has presented superior SCEs immunity compared to Si-GAA. The higher value for ON-current (ION), gm, and TGF of In0.53Ga0.47As-GAA device has been obtained as compared to the Si-GAA device. However, the In0.53Ga0.47As-GAA MOSFET performance factors such as OFF-current, subthreshold swing, and DIBL have been found to diminish compared to Si-GAA MOSFET. The In0.53Ga0.47As-GAA MOSFET can be considered to offer excellent analog performance compared to the Si-GAA device. Therefore, it is more superior for high-speed analog and switching applications.