Anwendungsmöglichkeiten von II–IV–V2-Halbleitern auf dem Gebiet der Optoelektronik H. BoudriotH. A. Schneider OriginalPaper Pages: 361 - 370
Ion beam gettering in AIII−BV compounds compared to silicon H. KloseM. GriepentrogU. Müller-Jahreis OriginalPaper Pages: 379 - 390
Microdefects in lec gallium phosphide and generation of dislocations in homoepitaxial layers G. WagnerV. GottschalchM. Pasemann OriginalPaper Pages: 391 - 407
Outdiffusion of impurities from GaP substrate material by means of postgrowth annealing G. RichterL. Hildisch OriginalPaper Pages: 409 - 415
Surface corrosion as an apparent cause of degradation of GaP : N LED’s T. TóthM. SomogyiG. Ferenczi OriginalPaper Pages: 417 - 422
On the origin of the increase of the yellow side band during ageing of GaP : N LED’s G. Aszódi OriginalPaper Pages: 423 - 427
The injection symmetry in high-doped semiconductorp + n junctions K. UngerO. Breitenstein OriginalPaper Pages: 429 - 435
Reliability of LED’s; Are the accelerated ageing tests reliable? G. Ferenczi OriginalPaper Pages: 437 - 440
Deep level studies on traps showing non-exponential kinetics in GaAsP and GaP L. DózsaG. Ferenczi OriginalPaper Pages: 449 - 457
Investigation of the influence of dislocations on minority carrier lifetime in VPE-GaP : N, Te R. MientusK. Wandel OriginalPaper Pages: 459 - 470