Abstract
After a short survey on gettering problems in semiconductor technology new results concerning ion beam gettering for silicon and AIII−BV compounds are reviewed.
Our own results in the field of ion beam gettering in GaP demonstrate that
-
(i)
the gettering by implanted aluminium atoms is proved, and
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(ii)
the ion beam damage in GaP is suitable for the gettering of copper atoms.
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Klose, H., Griepentrog, M. & Müller-Jahreis, U. Ion beam gettering in AIII−BV compounds compared to silicon. Acta Physica 51, 379–390 (1981). https://doi.org/10.1007/BF03159675
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DOI: https://doi.org/10.1007/BF03159675