Growth of high-Tc superconductive YBa2Cu3O7−δ crystals in oxidic melts K. Fischer Condensed Matter Pages: 153 - 157
Single crystal growth and characterization of indium and nitrogen doped GaAs F. MoravecB. ŠtepánekP. Doubrava Condensed Matter Pages: 159 - 163
Liquid phase epitaxy of quaternary solid solutions on profiled gallium antimonide substrates E. BochkarevL. M. DolginovB. N. Sverdlov Condensed Matter Pages: 165 - 169
AIIIBV quaternary solid solution liquid phase epitaxy near immiscibility range: InGaAsSb/GaSb A. E. BochkarevL. M. Dolginov Condensed Matter Pages: 171 - 175
Properties of silicon single crystals grown in magnetic fields F. P. BochkarevO. V. PelevinV. V. Sergeichuk Condensed Matter Pages: 177 - 181
Investigation of the electrophysical parameter distribution in crystals by a multiprobe method E. KlotynshG. Valdats Condensed Matter Pages: 183 - 188
Czochralski growth of Li2B4O7 single crystals T. ŁukasiewiczA. Majchrowski Condensed Matter Pages: 189 - 190
Anomalous behaviour of dopants in GaAs during growth process V. B. OsvenskyI. V. StepantsovaYu. N. Bolsheva Condensed Matter Pages: 191 - 196
Dissolution forms of rare-earth gallium-aluminium garnets E. BeregiE. HartmannJ. Lábár Condensed Matter Pages: 197 - 201
Growth mechanism induced defects in solution-grown single crystals L. Malicskó Condensed Matter Pages: 203 - 209
Carbon in undoped Si-GaAs: The influence of growth conditions A. M. NosovskyYu. N. BolshevaV. B. Osvensky Condensed Matter Pages: 211 - 216
The progress in MOCVD and MBE in China Peng Rui-wuKong Mei-yingJin Yi-xin Condensed Matter Pages: 217 - 230
Automatic diameter control in high-pressure LEC growth of gallium arsenide R. MagnaniniM. CurtiT. Görög Condensed Matter Pages: 231 - 236
Growth of Ba1−x Sr x TiO3 and doped BaTiO3 single crystals by the method of floating zone in a thermal image furnace K. PolgárP. LompréA. Maillard Condensed Matter Pages: 237 - 241
Dry etching in low frequency plasma system Zs. FodorÉ. TüttőA. Nagy Condensed Matter Pages: 243 - 247
Influence of the technological circumstances on the homogeneity of n-GaAs epitaxial structures K. SomogyiI. GyúróSz. Varga Condensed Matter Pages: 249 - 257
Photo-electrochemical development of dislocations in n-GaAs Á. NemcsicsK. Somogyi Condensed Matter Pages: 259 - 265
Some homogeneity investigations at low temperature epitaxial growth of GaAs I. MészárosI. GyúróK. Somogyi Condensed Matter Pages: 267 - 274
Multiple zone furnaces for synthetizing and growing GaAs and InAs M. HársyE. Lendvay Condensed Matter Pages: 275 - 276
Selective epitaxial growth of GaAs/GaAlAs multiquantum-well structures Z. LábadiE. Lendvay Condensed Matter Pages: 277 - 282
A new rotational vertical LPE System for GaAs−GaAlAs superlattice production P. MasaZ. LábadiE. Lendvay Condensed Matter Pages: 283 - 285