Abstract
In the present work heterostructures were grown in a whole technological process on relief (“terrace” and “double channel”) GaSb substrates. The best results were etched on a substrate by photolithographic techniques. Terrace direction and etchant composition were chosen so that terrace slopes were formed with (111)-A planes. On the substrates formed the n-AlGaAsSb, p-AlGaAsSb, p-InGaAsSb, n-AlGaAsSb and p-GaSb layers were successively grown up.
Selection of the proper solution-melt supersaturation allows to prevent the first n-AlGaAsSb layer from being grown up on the terrace-slope surface, and the layer thickness on the other part of the surface was up to 1÷2 μm. The next p-AlGaAsSb layer was already grown without break on the terrace slope.
Injection lasers on the base of such structures operate in the 2–2.4 μm spectral range with minimum threshold current (CW operation at 300 K) at the level of up to 45 mA.
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Bochkarev, E., Dolginov, L.M., Eliseev, P.G. et al. Liquid phase epitaxy of quaternary solid solutions on profiled gallium antimonide substrates. Acta Physica Hungarica 70, 165–169 (1991). https://doi.org/10.1007/BF03156260
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DOI: https://doi.org/10.1007/BF03156260