Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection Swapna SunkariM. S. MazzolaJ. L. Wyatt Special Issue Paper Pages: 320 - 323
Fast epitaxial growth of high-purity 4H-SiC(\(000\bar 1\)) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition Katsunori DannoTsunenobu KimotoHiroyuki Matsunami Special Issue Paper Pages: 324 - 329
Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance Ho-Young ChaY. C. ChoiO. Kiprijanovic Special Issue Paper Pages: 330 - 335
Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates Z. -Q. FangB. ClaflinW. C. Mitchel Special Issue Paper Pages: 336 - 340
Drift-free 10-kV, 20-A 4H-SiC PiN diodes Brett A. HullMrinal K. DasSumi Krishnaswami Special Issue Paper Pages: 341 - 344
SiC field-effect devices operating at high temperature Ruby N. GhoshPeter Tobias Special Issue Paper Pages: 345 - 350
Planar defects in 4H-SiC PiN diodes M. E. TwiggR. E. StahlbushL. Zhu Special Issue Paper Pages: 351 - 356
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Benjamin A. HaskellArpan ChakrabortyShuji Nakamura Special Issue Paper Pages: 357 - 360
Superior suppression of gate current leakage in Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors C. X. WangN. MaedaT. Enoki Special Issue Paper Pages: 361 - 364
AIN-based dilute magnetic semiconductors R. M. FrazierG. T. ThalerJ. M. Zavada Special Issue Paper Pages: 365 - 369
Design of edge termination for GaN power Schottky diodes J. R. LarocheF. RenB. Peres Special Issue Paper Pages: 370 - 374
Environmental sensitivity of Au diodes on n-AlGaN E. D. ReadingerS. E. Mohney Special Issue Paper Pages: 375 - 381
Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC O. J. GlembockiS. M. ProkesM. F. Macmillan Special Issue Paper Pages: 382 - 388
Properties of electrical contacts on bulk and epitaxial n-type ZnO T. E. MurphyJ. O. BlaszczakJ. D. Phillips Special Issue Paper Pages: 389 - 394
Proton irradiation of ZnO schottky diodes Rohit KhannaK. IpR. Wilkins Special Issue Paper Pages: 395 - 398
Shallow donor generation in ZnO by remote hydrogen plasma Yuri M. StrzhemechnyHoward L. MosbackerLeonard J. Brillson Special Issue Paper Pages: 399 - 403
Fabrication approaches to ZnO nanowire devices J. R. LaRocheY. W. HeoS. J. Pearton Special Issue Paper Pages: 404 - 408
Properties of phosphorus-doped (Zn,Mg)O thin films and device structures Y. W. HeoY. W. KwonD. P. Norton Special Issue Paper Pages: 409 - 415
Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications J. W. DongA. OsinskyS. J. Pearton Special Issue Paper Pages: 416 - 423
Crystal quality of InN thin films grown on ZnO substrate by radio-frequency molecular beam epitaxy Satoru OhuchiToshiyuki Takizawa Special Issue Paper Pages: 424 - 429
Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping Z. TianN. R. QuickA. Kar Special Issue Paper Pages: 430 - 438
Preparation of ultrasmooth and defect-free 4H-SiC(0001) surfaces by elastic emission machining Akihisa KubotaHidekazu MimuraKazuto Yamauchi Special Issue Paper Pages: 439 - 443
A magnetotransport study of AlGaN/GaN heterostructures on silicon S. ElhamriW. C. MitchelK. J. Linthicum Special Issue Paper Pages: 444 - 449
Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask C. LiP. LoseeT. P. Chow Special Issue Paper Pages: 450 - 456
Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen Maria LosurdoMaria M. GiangregorioChanghyun Yi Special Issue Paper Pages: 457 - 465