Abstract
4H-SiC(\(000\bar 1\)) epitaxial layers with a 14–28-µm thickness have been grown at high growth rates of 14–19 µm/h by chimney-type, vertical hot-wall, chemical vapor deposition (CVD) at 1,750°C. The 3C hillocks are formed on the epilayers grown under relatively low C/Si ratios. When grown at a relatively higher C/Si ratio of 0.6, the hillock density has been decreased to 1 cm−2. Under the C-rich condition, the concentrations of residual impurity (nitrogen) and intrinsic defects (Z1/2 and EH6/7) have been reduced. When growth has been performed at low C/Si ratios of 0.4 and 0.5, all the micropipes in the substrates (more than 100 micropipes for each condition) have been closed during CVD growth.
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References
W. von Münch and I. Pfaffeneder, J. Electrochem. Soc. 122, 643 (1975).
K. Fukuda, J. Senzaki, K. Kojima, and S. Suzuki, Mater. Sci. Forum 433–436, 567 (2003).
R.A. Stein and P. Lanig, J. Cryst. Growth 131, 71 (1993).
H. Matsunami and T. Kimoto, Mater. Sci. Eng. R20, 125 (1997).
K. Kojima, T. Suzuki, S. Kuroda, J. Nishio, and K. Arai, Jpn. J. Appl. Phys. 42, L637 (2003).
K. Fujihira, T. Kimoto, and H. Matsunami, J. Cryst. Growth 255, 136 (2003).
S. Nakashima and H. Harima, Phys. Status Solidi (a) 162, 39 (1997).
H. Tsuchida, I. Kamata, S. Izumi, T. Tawara, T. Jikimoto, T. Miyanagi, T. Nakamura, and K. Izumi, Mater. Res. Soc. Symp. Proc. 815, 35 (2004).
I. Kamata, H. Tsuchida, T. Jikimoto, and K. Izumi, Jpn. J. Appl. Phys. 39, 6496 (2000).
I. Kamata, H. Tsuchida, T. Jikimoto, and K. Izumi, Jpn. J. Appl. Phys. 41, L1137 (2002).
T. Yamamoto, T. Kimoto, and H. Matsunami, Mater. Sci. Forum 264–268, 111 (1998).
J. Zhang, A. Ellison, A. Henry, M.K. Linnarsson, and E. Janzén, Mater. Sci. Eng. B61, 151 (1999).
G. Wagner and K. Irmschner, Mater. Sci. Eng. 351, 95 (2001).
D.J. Larkin, P.G. Neudeck, J.A. Powell, and L.G. Matus, Appl. Phys. Lett. 65, 1659 (1994).
T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schöner, and N. Nordell, Phys. Status Solidi (a) 162, 199 (1997).
C. Hemmingson, N.T. Son, O. Kordina, J.P. Bergman, E. Janzén, J.L. Lindstrom, S. Savage, and N. Nordell, J. Appl. Phys. 81, 6155 (1997).
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Danno, K., Kimoto, T., Asano, K. et al. Fast epitaxial growth of high-purity 4H-SiC(\(000\bar 1\)) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition. J. Electron. Mater. 34, 324–329 (2005). https://doi.org/10.1007/s11664-005-0104-7
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DOI: https://doi.org/10.1007/s11664-005-0104-7