Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications D. Y. C. Lie Review Pages: 377 - 401
Ohmic contacts formation of silicon schottky diodes by screen printing and rapid isothermal processing D. RatakondaR. SinghS. Narayanan Regular Issue Paper Pages: 402 - 404
Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures P. P. LeeR. J. HwuM. C. Wood Regular Issue Paper Pages: 405 - 408
Structural and optical properties of GaxIn1−xP layers grown by chemical beam epitaxy Tae-Yeon SeongJung-Ja YangPhil W. Yu Regular Issue Paper Pages: 409 - 413
Formation of InSb quantum dots in a GaSb matrix A. F. Tsatsul’NikovS. V. IvanovZh. I. Alferov Regular Issue Paper Pages: 414 - 417
Analysis of the stress and interfacial reactions in Pt/Ti/SiO2/Si for use with ferroelectric thin films Lynnette D. MadsenLouise WeaverAlison J. Clark Regular Issue Paper Pages: 418 - 426
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix S. RouvimovZ. Liliental-WeberS. Noda Regular Issue Paper Pages: 427 - 432
Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In, Ga)Se2 solar cell materials Douglas L. SchulzCalvin J. CurtisDavid S. Ginley Regular Issue Paper Pages: 433 - 437
Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers NugrahaWataru TamuraJunichi Nishizawa Regular Issue Paper Pages: 438 - 441
Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors J. GarciaC. DuaD. Pavlidis Regular Issue Paper Pages: 442 - 445
Selective area epitaxy of GaAs using tri-isopropylgallium Ruth ZhangRaymond TsuiJohn Tresek Regular Issue Paper Pages: 446 - 450
Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing K. KuriyamaK. UshiyamaK. Yokoyama Regular Issue Paper Pages: 462 - 465
Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy Joon-Hyung KimTae-Yeon SeongP. J. Walker Regular Issue Paper Pages: 466 - 471
Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling S. MuthuvenkatramanSuresh GorantlaDonald L. Dorsey Regular Issue Paper Pages: 472 - 478
Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS D. P. DocterJ. P. IbbetsonD. E. Grider Regular Issue Paper Pages: 479 - 483
Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance L. MalikovaFred H. PollakRAJ Bhat Regular Issue Paper Pages: 484 - 487
Photoelectrochemical Capacitance-Voltage Measurements in GaN C. E. StutzM. MackD. C. Look Letters Pages: L26 - L28
On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements M. GermainR. EvrardM. Heuken Letters Pages: L29 - L31
Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy R. ZhangT. F. Kuech Letters Pages: L35 - L39