Abstract
Rapid isothermal processing based on incoherent radiation as the source of optical and thermal energy is playing a major role in flexible fast-cycle time integrated circuits manufacturing. In this paper, we present the dark and illuminated current-voltage characteristics of silicon Schottky barrier diodes where the ohmic contacts are formed by screen printing and rapid isothermal annealing. These results are compared with evaporated contacts followed by furnace annealing or rapid isothermal annealing. In this paper, we have shown that the ohmic contacts formed by screen printing and rapid isothermal annealing are compatible with the contacts formed by evaporation process. The processing time of the screen printed ohmic contacts is significantly lower than the contacts formed by evaporation process.
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E.S. Yang, Microelectronic Devices (New York: Mc Graw Hill Inc., 1988).
R. Singh, J. Appl. Phys. 63, R59 (1988).
R. Singh, S. Sinha, R.P.S. Thakur and P. Chou, Appl. Phys. Lett. 58, 1217 (1991).
R. Singh, Proc. TMS Intl. Conf on Beam Processing of Advanced Materials (Warrendale, PA: TMS, 1993), p. 619.
R. Singh, Handbook of Compound Semiconductors, (NJ: Noyes Publications, 1995).
R. Singh and R.P.S. Thakur, The Electrochemical Society Interface 4, 28 (1995).
R. Singh, R. Sharangpani, K.C. Cherukuri, Y. Chen, D.M. Dawson, K.F. Poole, A. Rohatgi, S. Narayanan and R.P.S. Thakur, Proc. Mater. Res. Soc. (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 81.
L. Sardi, S. Bargioni, C. Canali, P. Davoli, M. Prudenziati and V. Valbus, Solar Cells, 11, 51 (1984).
Ferroelectronic Materials Division, 3398 Ag/Al and 3349 Ag paste, 27 Castilian Dr., Santa Barbara, CA 93117.
ML-20 Printer, deHaar Inc., 12 Wilmington Road, Burlington, MA 01803.
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Ratakonda, D., Singh, R., Vedula, L. et al. Ohmic contacts formation of silicon schottky diodes by screen printing and rapid isothermal processing. J. Electron. Mater. 27, 402–404 (1998). https://doi.org/10.1007/s11664-998-0167-3
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DOI: https://doi.org/10.1007/s11664-998-0167-3