Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds A. W. JiaM. KobayashiA. Yoshikawa OriginalPaper Pages: 117 - 121
Optical properties, electronic structure, and exciton binding energies in short period ZnS-ZnSe superlattices T. CloitreL. AigouyR. L. Aulombard OriginalPaper Pages: 123 - 129
The study of nitrogen doping in ZnSe and ZnSe:Te Y. FanJ. HanA. V. Nurmikko OriginalPaper Pages: 131 - 135
Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxy Shizuo FujitaTsuyoshi TojyoShigeo Fujita OriginalPaper Pages: 137 - 141
Au and Ag electrical contacts to p-ZnSe J. J. FijolL. C. CalhounP. H. Holloway OriginalPaper Pages: 143 - 150
Ohmic contact and transport properties of II–VI Green/Blue laser diodes Jung HanR. L. GunshorA. V. Nurmikko OriginalPaper Pages: 151 - 154
Misfit strain induced tweed-twin transformation on composition modulation Zn1−xMgxSxSe1−y layers and the quality control of the ZnSe buffer/GaAs interface L. H. KuoL. Salamanca-RibaJ. M. De Puydt OriginalPaper Pages: 155 - 162
Deep level electronic structure of ZnSe/GaAs heterostructures A. RaisanenL. J. BrillsonL. Sorba OriginalPaper Pages: 163 - 169
Remarkable improvement in emission efficiency of ZnCdSe/Zn(S)Se LEDs by thermal annealing Yoshikatsu IchimuraKatsumi KishinoAtsushi Yoshida OriginalPaper Pages: 171 - 176
Molecular beam epitaxial growth of green light emitting diodes on ZnSe wafers M. H. JeonL. C. CalhounR. M. Park OriginalPaper Pages: 177 - 181
In situ P-doped Si and Si1−xGex epitaxial films grown by remote plasma enhanced chemical vapor deposition S. ThomasJ. FretwellC. Magee OriginalPaper Pages: 183 - 188
Effect of substrate smoothness on the microstructure of YBa9n2Cu3O7−x/Y2O3/YBa2Cu3O7−x trilayers G. L. WaytenaH. A. HoffClinton B. Lee OriginalPaper Pages: 189 - 195
Uniform intermixing of quantum wells in p-i-n modulator structures by impurity free vacancy diffusion S. J. LycettA. J. DewdneyJ. S. Roberts OriginalPaper Pages: 197 - 202
Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy B. BryskiewiczT. BryskiewiczE. Jiran OriginalPaper Pages: 203 - 209