Abstract
[100] composition modulation as well as [101] and
tweed strain contrast were observed in 0.72 μm thick Zn1−xMgxS Se1−y epitaxial films grown on ZnSe buffer layers. The lattice distortion induced tweed strain contrast disappears in relaxed Zn1−xMgxS Se1−y layers of thicknesses above ∼ 0.8—1 μm even though the [100] composition modulation remains. Instead, the formation of microtwins takes place to relieve the strain in the distorted lattice of the quaternary films. The Zn1−xMgxSySe1−y layers were obtained by growing a ZnSe buffer layer on Asstabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. The samples with film thickness of ∼0.72 μm were of very high quality with a defect density of less than 5 x lO4/cm2. Some samples showed rough ZnSe/ GaAs interfaces and a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.
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Kuo, L.H., Salamanca-Riba, L., Wu, B.J. et al. Misfit strain induced tweed-twin transformation on composition modulation Zn1−xMgxSxSe1−y layers and the quality control of the ZnSe buffer/GaAs interface. J. Electron. Mater. 24, 155–162 (1995). https://doi.org/10.1007/BF02659889
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DOI: https://doi.org/10.1007/BF02659889