Photoluminescence spectra of Si1-xGex/Si quantum well structures grown by three different techniques Koichi TerashimaMichio TajimaToru Tatsumi OriginalPaper Pages: 1081 - 1085
Abnormal grain growth in copper films during magnetically enhanced plasma processing M. D. NaeemH. J. LearyK. Rajan OriginalPaper Pages: 1087 - 1091
Application of defect spectroscopy to silicon processing technology J. L. Benton OriginalPaper Pages: 1093 - 1097
Photoluminescence investigations of graded, totally relaxed GexSi1-x structures J. MichelE. A. FitzgeraldL. C. Kimerling OriginalPaper Pages: 1099 - 1104
Size effect on the electrical conduction and noise of RuO2-based thick film resistors Bi-Shiou ChiouJer-Yuan SheuWen-Fa Wu OriginalPaper Pages: 1105 - 1110
Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD S. A. StockmanA. W. HansonG. E. Stillman OriginalPaper Pages: 1111 - 1118
Effect of microwave power and reactive gas ratio on the properties of silicon nitride thin films deposited by ECR PECVD Y. -C. JeonH. -Y. LeeS. -K. Joo OriginalPaper Pages: 1119 - 1122
High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InP G. J. SullivanC. W. FarleyR. L. Bernescut OriginalPaper Pages: 1123 - 1125
DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes F. Danie AuretS. A. GoodmanG. Myburg OriginalPaper Pages: 1127 - 1131
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers F. A. Kish. J. CaracciM. G. Craford OriginalPaper Pages: 1133 - 1139
The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si A. LubnowG. P. TangP. Zaumseil OriginalPaper Pages: 1141 - 1146
Carrier-concentration dependence of velocity-field characteristics in ln0.53Ga0.47 as D. HahnA. Schlachetzki OriginalPaper Pages: 1147 - 1152