Abstract
Several microns thick epitaxial InP films have been successfully deposited on exactly oriented (100) Si substrates by metal-organic vapour-phase epitaxy. We have studied the influence of a hydride preflow before buffer growth on the crystalline quality of the InP by measuring the surface roughness, by X-ray diffractometry, TEM and SEM investigations, and by detection of anti-phase-domains. Generally, an AsH3 preflow instead of PH3 improved the crystalline perfection considerably. Furthermore, if AsH3 is introduced only during cool-down between 700 and 900° C after the thermal cleaning step anti-phase-domain free InP is grown.
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References
M. Sugo, H. Mori, Y. Itoh, Y. Sakai, and M. Tachikawa, Ext. Abstr. Int. Conf. on Solid State Dev. and Mat., Yokohama, 317, (1991).
M. Sugo, H. Mori, Y. Sakai, and Y. Itoh, Appl. Phys. Lett.60, 472 (1992).
P. D. Hodson, R. Bradley, J. Riffat, T. Joyce, and R. Wallis, El. Lett.23, 1094 (1987).
A. Yamamoto and M. Yamaguchi, Mat. Res. Soc. Symp. Proc.116, 285 (1988).
M. Razeghi, R. Blondeau, M. Defour, F. Omnes, P. Maurel, and F. Brillouet, Appl. Phys. Lett.53, 854 (1988).
M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Brillouet, J. Fan, and J. Salerno, Appl. Phys. Lett. 53, 2389 (1988).
O. Aina, M. Serio, M. Mattingly, J. O’Connor, S. K. Shastry, D. S. Hill, J. P. Salerno, and P. Ferm, Appl. Phys. Lett.59, 268 (1991).
J. W. Lee, J. P. Salerno, R. P. Gale, and J. C. C. Fan, Mat. Res. Soc. Symp. Proc.91, 33 (1987).
S. Ohkouchi and I. Tanaka, Appl. Phys. Lett.59, 1588 (1991).
Y. Kohama, Y. Kadota, and Y. Ohmachi, Jpn. J. Appl. Phys.29, L229 (1990).
P. R. Pukite and P. I. Cohen, Appl. Phys. Lett.50, 1739 (1987).
J. Varrio, H. Asonen, J. Lammasniemi, K. Rakennus, and M. Pessa, Appl. Phys. Lett.55, 1987 (1989).
E. H. Nicollian and J. R. Brews, MOS Phys. and Techn. John Wiley and Sons, New York (1982).
K. Fujita, Y. Shiba, and T. Yamamoto, Jpn. J. Appl. Phys.29, L534 (1990).
S. Bugiel, P. Zaumseil, A. Lubnow, H.-H. Wehmann, and A. Schlachetzki, Phys. Stat. Sol. (a)132, 115 (1992).
G. P. Tang, A. Lubnow, H.-H. Wehmann, J. G. Zwinge, and A. Schlachetzki, Jpn. J. Appl. Phys.31, L1126 (1992).
E. D. Palik, O. J. Glembocki, I. Heard Jr., P. S. Burno, and L. Tenerz, J. Appl. Phys.70, 3291 (1991).
D. Agnello, T. O. Sedgwick, M. S. Goorsky, and J. Cotte, Appl. Phys. Lett.60, 454 (1992).
K. Asai, K. Fujita, and Y. Shiba, Jpn. J. Appl. Phys.30, L1967 (1991).
X.-Y. Zhu, M. Wolf, T. Huett, J. Nail, B. A. Banse, J. R. Creighton, and J. M. White, Appl. Phys. Lett.60, 977 (1992).
D. Gerthsen, D. K. Biegelsen, F. A. Ponce, and J. C. Tramontana, J. Cryst. Growth106, 157 (1990).
O. L. Alerhand, E. Kaxiras, J. D. Joannopoulos, and G. W. Turner, J. Vac. Sci. Technol. B7, 695 (1989).
S. Sharan and J. Narayan, J. Electron. Mater.20, 163 (1991).
W. A. Jesser and D. Kuhlmann-Wilsdorf, Phys. Stat. Sol.19, 95 (1967).
Z. G. Pinsker, Dynamical Scattering of X-rays in Crystals, Springer, Berlin, Heidelberg, New York (1978).
H. Horikawa, Y. Kawai, M. Akiyama, and M. Sakuta, J. Cryst. Growth93, 523 (1988).
J. P. van der Ziel, R. A. Logan, T. Tanbun-Ek, E. M. Monberg, and A. M. Sergent, Appl. Phys. Lett.58, 1372 (1991).
U. Pietsch, Phys. Stat. Sol. (a)87, 151 (1985).
K. Akita, T. Kusunoki, S. Komiya, and T. Kotami, J. Cryst. Growth46, 783 (1979).
K. Fujita and K. Asai, Appl. Phys. Lett.59, 3458 (1991).
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Lubnow, A., Tang, G.P., Wehmann, H.H. et al. The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si. J. Electron. Mater. 21, 1141–1146 (1992). https://doi.org/10.1007/BF02667607
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DOI: https://doi.org/10.1007/BF02667607