Germanium as a deep level in alxga1− xas grown by organometallic vapor phase epitaxy R. T. GreenW. I. Lee OriginalPaper Pages: 583 - 587
Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy B. Y. MaaP. D. Dapkus OriginalPaper Pages: 589 - 593
Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs F. RenA. B. EmersonJ. Lothian OriginalPaper Pages: 595 - 598
Effects of cooling rate on mechanical properties of near-eutectic tin-lead solder joints Z. MeiJ. W. MorrisT. S. E. Summers OriginalPaper Pages: 599 - 608
A model for the growth of cdte by metal organic chemical vapor deposition Y. NemirovskyD. GorenA. Ruzin OriginalPaper Pages: 609 - 613
Rutherford backscattering studies on high-energy Si-implanted InP Sadanand M. GulwadiRavi K. NadellaMulpuri V. Rao OriginalPaper Pages: 615 - 619
Ultraviolet photoluminescence from undoped and zn doped AlxGa1−xN with x between 0 and 0.75 H. G. LeeM. GershenzonB. L. Goldenberg OriginalPaper Pages: 621 - 625
Post-irradiation formation of Si-SiO2 interface states in a hydrogen atmosphere at room temperature B. J. Mrstik OriginalPaper Pages: 627 - 633
Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon Soo Hong LeeMartin A. Green OriginalPaper Pages: 635 - 641