Abstract
A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380° C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.
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Nemirovsky, Y., Goren, D. & Ruzin, A. A model for the growth of cdte by metal organic chemical vapor deposition. J. Electron. Mater. 20, 609–613 (1991). https://doi.org/10.1007/BF02669525
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DOI: https://doi.org/10.1007/BF02669525