Thermodynamic analysis and phase equilibria calculations for the In-Sb and Ga-Sb systems R. C. SharmaT. Leo NgaiY. A. Chang OriginalPaper Pages: 307 - 314
Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire I. GoleckiL. KrokoH. L. Glass OriginalPaper Pages: 315 - 321
Investigation of the ferroelectric properties of lead-modified Sr0.5Bao.5Nb2O6 with special reference to uncooled infrared detection K. K. Deb OriginalPaper Pages: 323 - 327
Rapidly annealed Mo-Polycide For VLSI gates and interconnects V. Q. Ho OriginalPaper Pages: 329 - 333
The preparation of modulation-doped GaAs/GaAs1-xPx strained-layer superlattices by metal organic chemical vapor deposition R. M BiefeldI. J. FritzB. L. Doyle OriginalPaper Pages: 335 - 340
Effect of die-attach temperature (455° C) on the bondability of bond finger of gold packages K. C. LeeL. K. LimS. J. Hu OriginalPaper Pages: 341 - 345
A thermal module design for advanced packaging Lih-Tyng HwangIwona TurlikArnold Reisman OriginalPaper Pages: 347 - 355
A high-performance thermal module for computer packaging Deepak NayakLih-Tyng HwangArnold Reisman OriginalPaper Pages: 357 - 364
Growth of high-quality 1.93-eV AIGaAs using metalorganic chemical vapor deposition C. R. LewisH. C. HamakerR. T. Green OriginalPaper Pages: 365 - 371
Evaluation of thin oxides grown by the atomic oxygen afterglow method J. RuzylloA. HoffG. Ruggles OriginalPaper Pages: 373 - 378