Abstract
Buried layers of SiC were formed in (100) single-crystal bulk silicon and silicon-on-sapphire by ion implantation of 125–180 keV, (0.56-1.00) × 1018 C/cm2 at 30–40 μA/ cm2 into samples held at 450-650° C. The as-implanted and 950° C annealed samples were characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, x-ray diffraction, four-point probe measurements, Dektak profilometry, I-V measurements, spreading resistance measurements and secondary ion mass spectrometry.
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Work done while affiliated with Rockwell International Corporation, Microelectronics Research & Development Center, 3370 Miraloma Avenue, Anaheim, CA 92803 and a Visiting Associate at the California Institute of Technology, Department of Applied Physics, Mail Code 116-81, Pasadena, CA 91125.
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Golecki, I., Kroko, L. & Glass, H.L. Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire. J. Electron. Mater. 16, 315–321 (1987). https://doi.org/10.1007/BF02657905
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DOI: https://doi.org/10.1007/BF02657905