H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD) C. R. LewisM. J. LudowiseW. T. Dietze OriginalPaper Pages: 447 - 461
Photoluminescence identification of the C and Be acceptor levels in InP B. J. SkrommeG. E. StillmanS. S. Chan OriginalPaper Pages: 463 - 491
Lead-europium-selenide-telluride grown by molecular beam epitaxy D. L. Partin OriginalPaper Pages: 493 - 504
Nitridation of silicon in a multiwafer plasma system A. ReismanM. BerkenblitC. J. Merz OriginalPaper Pages: 505 - 521
Analysis of complex equilibria in the Ge-Se-I vapor transport system saturated with GeSe(g) Y. K. RaoM. DonleyH. G. Lee OriginalPaper Pages: 523 - 542
Modulation of electronic properties in liquid phase epitaxially grown p-n-p-n GaAs multilayers P. ZwicknaglW. RehmE. Bauser OriginalPaper Pages: 545 - 558
Rapid thermal redistribution of copper impurities in GaAsxP1-x at temperatures above 250 °C Werner Schairer OriginalPaper Pages: 559 - 574
Electrophotographic characteristics of CdS binder layers after heat and light treatment effects K. M. KolentsovN. A. Balchev OriginalPaper Pages: 575 - 591
A novel low-temperature method of SiO2 film deposition forMOSFET applications K. P. PandeP. W. Davies OriginalPaper Pages: 593 - 602
Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure A. MirceaR. AzoulayM. Sacilotti OriginalPaper Pages: 603 - 620