Abstract
The band gap of lead-europium-telluride (Pb1-x EuxTe) was determined from room temperature optical absorption measurements and increases as dEg/dx = 3.5 eV for x ≤ 0.044. Eu atoms bond strongly to a PbTe surface during MBE growth and have a small diffusion coefficient (<1 x 10−16 cm /sec at 370°C). The lattice constant of Pb1-x, Eux Te is a nonlinear function of composition, and lattice-matched growth of Pb1-x Eux Sey Te1-y, on PbTe is demonstrated. Preliminary studies of the electrical properties of Pb1-x Eux Te indicate compensation of n-type (Bi) and p-type (Tl) dopants. These results indicate that Pb1-x Eux Sey Te1-y, may be useful for obtaining diode lasers which emit at wavelengths shorter than those available from Pb1-x, Snx Te.
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Partin, D.L. Lead-europium-selenide-telluride grown by molecular beam epitaxy. J. Electron. Mater. 13, 493–504 (1984). https://doi.org/10.1007/BF02656649
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DOI: https://doi.org/10.1007/BF02656649