Properties of conducting zinc oxide films prepared by R.F. Sputtering P. S. Nayar OriginalPaper Pages: 967 - 977
Transport properties and defects in semi-insulating and Si-implanted InP Jin K. RheePallab K. Bhattacharya OriginalPaper Pages: 979 - 1000
The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony C. B. CooperR. R. SaxenaM. J. Ludowise OriginalPaper Pages: 1001 - 1010
Plasma anodization of evaporated Al-InP systems Y. HirayamaH. M. ParkT. Sugano OriginalPaper Pages: 1011 - 1022
Properties of MoSi2 and WSi2, magnetron cosputtered from elemental targets D. R. Denison OriginalPaper Pages: 1023 - 1036
Device fabrication on epitaxial Si-Ge alloys Joseph H. NevinLeslie I. Halberg OriginalPaper Pages: 1037 - 1047
Chromium etching characteristics using a planar type plasma reactor H. SaekiY. WatakabeT. Kashiwagi OriginalPaper Pages: 1049 - 1063
Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields T. H. WindhornL. W. CookG. E. Stillman OriginalPaper Pages: 1065 - 1082
Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs H. KanberM. FengW. B. Henderson OriginalPaper Pages: 1083 - 1114
An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium K. L. HessP. D. DapkusG. E. Stillman OriginalPaper Pages: 1115 - 1137