Abstract
Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 − 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm−2 ev−1 for Al2 O3 -InP systems were obtained.
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Hirayama, Y., Park, H.M., Koshiga, F. et al. Plasma anodization of evaporated Al-InP systems. J. Electron. Mater. 11, 1011–1022 (1982). https://doi.org/10.1007/BF02658913
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DOI: https://doi.org/10.1007/BF02658913