Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range A. V. IkonnikovM. S. ZholudevS. A. Dvoretskii Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1545 - 1550
Anisotropy of the solid-state epitaxy of silicon carbide in silicon S. A. KukushkinA. V. Osipov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1551 - 1555
Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry P. A. YuninYu. N. DrozdovD. N. Lobanov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1556 - 1561
Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport A. V. GermanenkoG. M. MinkovN. N. Mikhailov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1562 - 1566
Photo- and electroluminescence from semiconductor colloidal quantum dots in organic matrices: QD-OLED A. G. VitukhnovskiiA. A. VaschenkoD. A. Korzhonov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1567 - 1569
Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges A. A. UsikovaN. D. Il’inskayaP. S. Kop’ev Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1570 - 1573
Lateral photoconductivity in structures with Ge/Si quantum dots V. Yu. PanevinA. N. SofronovG. Schmidt Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1574 - 1577
Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P) N. V. KurovaV. A. Burdov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1578 - 1582
Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots N. S. VolkovaA. P. GorshkovB. N. Zvonkov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1583 - 1586
Structural studies of a ferromagnetic GaMnSb layer A. I. BobrovE. D. PavlovaN. V. Malekhonova Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1587 - 1590
Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer E. D. PavlovaA. P. GorshkovB. N. Zvonkov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1591 - 1594
Growth model of silicon nanoislands on sapphire N. O. KrivulinD. A. PavlovP. A. Shilyaev Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1595 - 1597
Laterally localizing potential as a tool for controlling the electron spin relaxation time in GaAs quantum wells A. V. LarionovA. I. Il’in Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1598 - 1603
Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond Yu. M. BelousovV. R. SolovievI. V. Chernousov Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation) 11 December 2013 Pages: 1604 - 1609
Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering Majid KhanMohammad Islam Spectroscopy, Interaction With Radiation 11 December 2013 Pages: 1610 - 1615
Simulation of the absorption of a femtosecond laser pulse in crystalline silicon I. V. GukG. A. MartsinovskyE. B. Yakovlev Spectroscopy, Interaction with Radiation 11 December 2013 Pages: 1616 - 1620
Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them I. A. SupryadkinaK. K. AbgaryanI. V. Mutigullin Surfaces, Interfaces, and Thin Films 11 December 2013 Pages: 1621 - 1625
Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems S. I. Pokutnyi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1626 - 1635
Study of the photocatalytic and sensor properties of ZnO/SiO2 nanocomposite layers A. S. BozhinovaN. V. KanevaE. I. Terukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1636 - 1640
Dynamic characteristics of double-barrier nanostructures with asymmetric barriers of finite height and widths in a strong ac electric field V. A. Chuenkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 December 2013 Pages: 1641 - 1651
Fabrication and study of p-n structures with crystalline inclusions in the space-charge region V. S. KalinovskyR. V. LevinV. M. Andreev Physics of Semiconductor Devices 11 December 2013 Pages: 1652 - 1655
Spectral dependence of the linewidth enhancement factor in quantum dot lasers F. I. ZubovYu. M. ShernyakovN. Yu. Gordeev Physics of Semiconductor Devices 11 December 2013 Pages: 1656 - 1660