Abstract
A growth model of silicon nanoislands on silicon by molecular-beam epitaxy is refined. It is shown that silicon islands grow due to the diffusion of material from the wetting layer, with the contribution from direct hits of atoms to this growth being nearly zero.
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P. Bettotti et al., J. Phys.: Condens. Matter 14, 8253 (2002).
S. Yanagiya and M. Ishida, J. Electron. Mater. 28, 496 (1999).
Y. Zhu and P. P. Ong, Surf. Rev. Lett. 8, 559 (2001).
O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Foikhtlender, Semiconductors 34, 1229 (2000).
N. N. Gerasimenko and Yu. N. Parkhomenko, Silicon: A Material for Nanoelectronics (Tekhnosfera, Moscow, 2007) [in Russian].
D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, and N. O. Krivulin, Tech. Phys. Lett. 36, 548 (2010).
D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov, N. O. Krivulin, and A. I. Bobrov, Bull. Russ. Acad. Sci.: Phys. 76, 1002 (2012).
V. G. Dubrovskii, Theoretical Principles of Semiconductor Nanostructure Technology (St.-Petersburg, 2006) [in Russian].
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Original Russian Text © N.O. Krivulin, D.A. Pavlov, P.A. Shilyaev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 12, pp. 1621–1623.
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Krivulin, N.O., Pavlov, D.A. & Shilyaev, P.A. Growth model of silicon nanoislands on sapphire. Semiconductors 47, 1595–1597 (2013). https://doi.org/10.1134/S1063782613120117
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DOI: https://doi.org/10.1134/S1063782613120117