Device characteristics of long-wavelength lasers based on self-organized quantum dots A. E. ZhukovM. V. MaksimovA. R. Kovsh Review 10 October 2012 Pages: 1225 - 1250
Isochronous annealing of n-Si samples irradiated with 25-MeV protons T. A. PagavaM. G. BeridzeN. I. Maisuradze Electronic Properties of Semiconductors 10 October 2012 Pages: 1251 - 1255
Transport phenomena in the anisotropic layered compounds MeBi4Te7 (Me = Ge, Pb, Sn) M. K. ZhitinskayaS. A. NemovT. E. Svechnikova Electronic Properties of Semiconductors 10 October 2012 Pages: 1256 - 1262
On superparamagnetism in quasi-one-dimensional semiconductor antiferromagnets TlFeS2 and TlFeSe2 R. G. Veliyev Electronic Properties of Semiconductors 10 October 2012 Pages: 1263 - 1264
Study of the impurity photoconductivity and luminescence in ZnSe:Ni crystals in the visible spectral region Yu. A. NitsukYu. F. VaksmanV. V. Yatsun Spectroscopy, Interaction with Radiation 10 October 2012 Pages: 1265 - 1269
Creation and photoelectric properties of Ox/p-InAs heterostructures V. Yu. Rud’Yu. V. Rud’M. S. Serginov Surfaces, Interfaces, and Thin Films 10 October 2012 Pages: 1270 - 1273
Small-signal field effect in GaAs/InAs quantum-dot heterostructures S. V. Tikhov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 October 2012 Pages: 1274 - 1280
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region A. F. TsatsulnikovW. V. LundinN. A. Cherkashin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 October 2012 Pages: 1281 - 1285
Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions I. E. TyschenkoV. A. Volodin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 October 2012 Pages: 1286 - 1290
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions P. V. LukinV. V. ChaldyshevB. R. Semyagin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 October 2012 Pages: 1291 - 1295
Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods N. G. AlmasovO. Yu. PrikhodkoK. D. Tsendin Amorphous, Vitreous, and Organic Semiconductors 10 October 2012 Pages: 1296 - 1298
Comparative assessment of III–V heterostructure and silicon underlap double gate MOSFETs Hemant PardeshiGodwin RajChandan Kumar Sarkar Physics of Semiconductor Devices 10 October 2012 Pages: 1299 - 1303
On the active conductivity of a three-barrier resonant-tunneling structure and optimization of quantum cascade laser operation N. V. TkachJu. A. SetiI. V. Boyko Physics of Semiconductor Devices 10 October 2012 Pages: 1304 - 1309
Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN Huanting ChenArno KeppensZhong Chen Physics of Semiconductor Devices 10 October 2012 Pages: 1310 - 1315
Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes V. V. KabanovYe. V. LebiadokI. S. Tarasov Physics of Semiconductor Devices 10 October 2012 Pages: 1316 - 1320
850-nm diode lasers based on AlGaAsP/GaAs heterostructures D. A. VinokurovV. A. KapitonovI. S. Tarasov Physics of Semiconductor Devices 10 October 2012 Pages: 1321 - 1325
Influence of source-to-substrate distance on the properties of ZnS films grown by close-space sublimation M. AshratM. MehmoodA. Qayyum Fabrication, Treatment, and Testing of Materials and Structures 10 October 2012 Pages: 1326 - 1330
Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers Yu. M. ShernyakovM. V. MaksimovD. A. Livshits Fabrication, Treatment, and Testing of Materials and Structures 10 October 2012 Pages: 1331 - 1334
InGaN/GaN heterostructures grown by submonolayer deposition A. F. TsatsulnikovW. V. LundinN. A. Cherkashin Fabrication, Treatment, and Testing of Materials and Structures 10 October 2012 Pages: 1335 - 1340
Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates I. I. IzhninK. D. MynbaevS. A. Dvoretsky Fabrication, Treatment, and Testing of Materials and Structures 10 October 2012 Pages: 1341 - 1345
Growth of 4H silicon carbide crystals on a (11\( \bar 2 \)2) seed A. Yu. FadeevA. O. LebedevYu. M. Tairov Fabrication, Treatment, and Testing of Materials and Structures 10 October 2012 Pages: 1346 - 1350