Abstract
Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.
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S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Semiconductors 38, 1430 (2004).
S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, K. S. Borshchev, D. A. Vinokurov, and I. S. Tarasov, Semiconductors 40, 990 (2006).
I. S. Tarasov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, D. A. Vinokurov, K. S. Borschev, V. A. Kapitonov, M. A. Khomylev, A. Yu. Leshko, A. V. Lyutetskiy, and A. L. Stankevich, Spectrochim. Acta A 66, 819 (2007).
I. S. Tarasov, Quantum Electron. 40, 661 (2010).
D. A. Livshits, I. V. Kochnev, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, I. S. Tarasov, and Zh. I. Alferov, Electron. Lett. 36, 1848 (2000).
L. I. Burov, E. V. Lebedok, V. K. Kononenko, A. G. Ryabtsev, and G. I. Ryabtsev, J. Appl. Spectrosc. 74, 878 (2007).
V. V. Kabanov, E. V. Lebiadok, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, V. V. Sherstnev, A. P. Astakhova, and Yu. P. Yakovlev, Semiconductors 43, 500 (2009).
P. T. Landsberg, M. S. Abrahams, and M. Osinski, IEEE J. Quant. Electron. 21, 24 (1985).
A. A. Afonenko, V. K. Kononenko, I. S. Manak, and V. A. Shevtsov, Semiconductors 31, 929 (1997).
M. P. Krijn, Semicond. Sci. Technol. 6, 27 (1991).
L. A. Coldren and S. W. Corzine, Diode Lasers and Photonicintegrated Circuits (Wiley, New York, 1995).
H. C. Casey and M. B. Panish, Heterostructure Lasers (Academic Press, New York, 1978; Mir, Moscow, 1981), pt B.
V. P. Gribkovskii, Theory of Absorption and Emission of Light in Semiconductors (Nauka Tekhnika, Minsk, 1975) [in Russian].
V. K. Kononenko and V. P. Gribkovskii, Sov. Phys. Semicond. 5, 1631 (1971).
L. I. Burov, I. N. Varaksa, S. V. Voitikov, M. I. Kramar, A. G. Ryabtsev, and G. I. Ryabtsev, Quantum Electron. 32, 260 (2002).
G. I. Ryabtsev and A. S. Smal’, J. Appl. Spectrosc. 70, 550 (2002).
G. I. Ryabtsev, T. V. Bezyazychnaya, M. V. Bogdanovich, V. V. Parastchuk, A. I. Yenzhyieuski, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, M. A. Shchemelev, V. V. Bezotosnyi, K. A. Shore, and S. Banerjee, Appl. Phys. B 90, 471 (2008).
G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quant. Electron. 24, 2138 (1988).
Z. N. Sokolova and V. B. Khalfin, Sov. Phys. Semicond. 23, 1117 (1989).
L. V. T. Nguyen and P. C. R. Gurnev, IEEE J. Sel. Top. Quantum Electron. 1, 494 (1995).
B. L. Gel’mont and Z. N. Sokolova, Sov. Phys. Semicond. 16, 1067 (1982).
S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova, A. Yu. Leshko, and I. S. Tarasov, Semiconductors 45, 663 (2011).
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Original Russian Text © V.V. Kabanov, Ye.V. Lebiadok, G.I. Ryabtsev, A.S. Smal, M.A. Shchemelev, D.A. Vinokurov, S.O. Slipchenko, Z.N. Sokolova, I.S. Tarasov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 10, pp. 1339–1343.
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Kabanov, V.V., Lebiadok, Y.V., Ryabtsev, G.I. et al. Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes. Semiconductors 46, 1316–1320 (2012). https://doi.org/10.1134/S1063782612100077
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DOI: https://doi.org/10.1134/S1063782612100077