Optical spectra of six silicon phases V. V. SobolevV. Val. SobolevS. V. Shushkov Electronic Properties of Semiconductors 07 October 2011 Pages: 1247 - 1250
Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure A. R. DegheidyE. B. Elkenany Electronic Properties of Semiconductors 07 October 2011 Pages: 1251 - 1257
Structure and magnetic properties of InSe single crystals intercalated by nickel I. M. StakhiraN. K. TovstyukA. N. Shchupliak Electronic Properties of Semiconductors 07 October 2011 Pages: 1258 - 1263
Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes A. I. VeingerA. G. ZabrodskiiS. I. Goloshchapov Electronic Properties of Semiconductors 07 October 2011 Pages: 1264 - 1272
Band gap of CdTe and Cd0.9Zn0.1Te crystals L. A. KosyachenkoV. M. SklyarchukO. L. Maslyanchuk Spectroscopy, Interaction with Radiation 07 October 2011 Pages: 1273 - 1280
The effect of Sn impurity on the optical and structural properties of thin silicon films V. V. VoitovychV. B. NeimashV. V. Strelchuk Surfaces, Interfaces, and Thin Films 07 October 2011 Pages: 1281 - 1285
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer H. AltuntasS. AltindalS. Ozcelik Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1286 - 1290
Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion accelerator A. I. StetsunL. A. Dvorina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1291 - 1296
Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate A. P. BelyaevV. P. RubetsE. O. Eremina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1297 - 1300
Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers V. F. AgekyanP. O. HolzN. G. Filosofov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1301 - 1305
A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation P. A. IvanovA. S. PotapovN. Sleptsuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1306 - 1310
Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions G. A. KachurinS. G. CherkovaV. A. Volodin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1311 - 1316
Photoelectric properties of porous GaN/SiC heterostructures M. G. MynbaevaA. A. SitnikovaK. D. Mynbaev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1317 - 1320
Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density R. A. KhabibullinI. S. Vasil’evskiiV. A. Kulbachinskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1321 - 1326
Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures A. N. SemenovB. Ya. MeltserS. V. Ivanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1327 - 1333
Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature M. M. GrigoryevE. V. IvanovK. D. Moiseev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 October 2011 Pages: 1334 - 1338
Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materials V. M. SvetlichnyiE. L. AleksandrovaV. V. Kudryavtsev Amorphous, Vitreous, and Organic Semiconductors 07 October 2011 Pages: 1339 - 1345
Tin impurity centers in glassy germanium chalcogenides G. A. BordovskyP. V. GladkikhE. I. Terukov Amorphous, Vitreous, and Organic Semiconductors 07 October 2011 Pages: 1346 - 1351
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures V. G. TikhomirovN. A. MaleevV. M. Ustinov Physics of Semiconductor Devices 07 October 2011 Pages: 1352 - 1356
Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves G. G. UntilaA. P. PalovV. V. Dvorkin Physics of Semiconductor Devices 07 October 2011 Pages: 1357 - 1363
Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate D. A. VinokurovV. A. KapitonovI. S. Tarasov Physics of Semiconductor Devices 07 October 2011 Pages: 1364 - 1368
On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures A. M. IvanovA. V. SadokhinA. A. Lebedev Physics of Semiconductor Devices 07 October 2011 Pages: 1369 - 1373
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier P. A. IvanovI. V. GrekhovT. V. Semenov Physics of Semiconductor Devices 07 October 2011 Pages: 1374 - 1377
Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers S. O. SlipchenkoA. A. PodoskinI. S. Tarasov Physics of Semiconductor Devices 07 October 2011 Pages: 1378 - 1385