Abstract
The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate at a temperature of ∼300°C, there is a crystalline phase of silicon in samples with tin. High-vacuum annealing at 350–750°C leads to growth of the crystalline phase in films with tin: nanocrystals grow in size from ∼3.0 to 4.5 nm. At the same time, in films without tin, only the degree of the short-range order increases. Silicon film without tin remains amorphous over the entire range of annealing temperatures.
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Original Russian Text © V.V. Voitovych, V.B. Neimash, N.N. Krasko, A.G. Kolosiuk, V.Yu. Povarchuk, R.M. Rudenko, V.A. Makara, R.V. Petrunya, V.O. Juhimchuk, V.V. Strelchuk, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 10, pp. 1331–1335.
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Voitovych, V.V., Neimash, V.B., Krasko, N.N. et al. The effect of Sn impurity on the optical and structural properties of thin silicon films. Semiconductors 45, 1281–1285 (2011). https://doi.org/10.1134/S1063782611100253
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DOI: https://doi.org/10.1134/S1063782611100253