Electroplasticity of undoped and doped silicon A. R. Velikhanov Atomic Structure and Nonelectronic Propertties of Semiconductors 05 March 2010 Pages: 137 - 140
Preparation and optical properties of ZnSe:Ni crystals Yu. F. VaksmanYu. A. NitsukP. V. Shapkin Electrical and Optical Properties of Semiconductors 05 March 2010 Pages: 141 - 144
Instability of the current of the longitudinal autosoliton in p-InSb in a longitudinal magnetic field I. K. KamilovA. A. StepurenkoA. E. Gummetov Electrical and Optical Properties of Semiconductors 05 March 2010 Pages: 145 - 150
Anomalous scattering of electrons in n-Si crystals irradiated with protons T. A. PagavaN. I. Maisuradze Electrical and Optical Properties of Semiconductors 05 March 2010 Pages: 151 - 154
The conductivity and magnetic properties of zinc oxide thin films doped with cobalt V. G. KytinV. A. KulbachinskiiO. V. Reukova Electrical and Optical Properties of Semiconductors 05 March 2010 Pages: 155 - 160
Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn V. Yu. DavydovA. A. KlochikhinS. Gwo Electrical and Optical Properties of Semiconductors 05 March 2010 Pages: 161 - 170
Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures A. P. BakhtinovV. N. VodopyanovO. S. Lytvyn Semiconductor Structures, Interfaces, and Surfaces 05 March 2010 Pages: 171 - 183
The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures P. V. SeredinA. V. GlotovI. A. Zhurbina Low-Dimensional Systems 05 March 2010 Pages: 184 - 188
The role of interface phonons in the formation of polaron states in quantum wells A. Yu. MaslovO. V. Proshina Low-Dimensional Systems 05 March 2010 Pages: 189 - 193
Spin injection in GaAs/GaSb quantum-well heterostructures Ya. V. Terent’evA. A. ToropovS. V. Ivanov Low-Dimensional Systems 05 March 2010 Pages: 194 - 197
Impact of resonance-state scattering on the kinetics of two-dimensional electrons M. S. KeepaP. S. AlekseevI. N. Yassievich Low-Dimensional Systems 05 March 2010 Pages: 198 - 205
Visible photoluminescence of selectively etched porous nc-Si-Siox structures I. Z. IndutnyiE. V. MichailovskaV. A. Dan’ko Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 March 2010 Pages: 206 - 210
The mechanism of metal conductivity over the interface between organic insulators V. R. NikitenkoA. R. TameevA. V. Vannikov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 March 2010 Pages: 211 - 217
Calculation and analysis of distributions of current density and temperature over the area of the the InGaN/GaN structure of high-power light-emitting diodes V. A. SergeevA. M. Hodakov Physics of Semiconductor Devices 05 March 2010 Pages: 218 - 222
InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage Jung-Hui TsaiWen-Shiung LourChien-Ming Li Physics of Semiconductor Devices 05 March 2010 Pages: 223 - 227
Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping L. B. KarlinaA. S. VlasovV. M. Andreev Physics of Semiconductor Devices 05 March 2010 Pages: 228 - 232
Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide D. A. VinokurovV. V. VasilyevaI. S. Tarasov Physics of Semiconductor Devices 05 March 2010 Pages: 233 - 237
A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD D. A. VinokurovV. P. KonyaevI. S. Tarasov Physics of Semiconductor Devices 05 March 2010 Pages: 238 - 242
Dissipation loss of mid-infrared radiation in a dielectric waveguide N. S. AverkievS. O. SlipchenkoI. S. Tarasov Physics of Semiconductor Devices 05 March 2010 Pages: 243 - 245
Epitaxial growth and properties of Mg x Zn1-x O films produced by pulsed laser deposition A. A. LotinO. A. NovodvorskyK. D. Chtcherbachev Fabrication, Treatment, and Testing of Materials and Structures 05 March 2010 Pages: 246 - 250
Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire V. V. RatnikovR. N. KyuttA. Baar Fabrication, Treatment, and Testing of Materials and Structures 05 March 2010 Pages: 251 - 254
Thermophotovoltaic generators based on gallium antimonide V. P. KhvostikovS. V. SorokinaV. M. Andreev Fabrication, Treatment, and Testing of Materials and Structures 05 March 2010 Pages: 255 - 262
High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm) A. P. AstakhovaA. S. GolovinYu. P. Yakovlev Fabrication, Treatment, and Testing of Materials and Structures 05 March 2010 Pages: 263 - 268
In the memory of Boris Andreevich Volkov P. I. ArseevM. A. Vasil’evD. R. Khokhlov In Memoriam 05 March 2010 Pages: 269 - 270