Abstract
Design parameters of epitaxially stacked tunnel-junction asymmetric separate-confinement laser heterostructures are chosen. Technological modes for fabrication of heterostructures of this kind by metal-organic chemical vapor deposition in the system of AlGaAs/GaAs/InGaAs solid solutions are found. It is demonstrated that high-efficiency GaAs:Si/GaAs:C tunnel stru ctures and asymmetric AlGaAs/GaAs/InGaAs laser heterostructures with low internal optical loss can be fabricated in a single technological process. Conditions are chosen in which a deep mesa can be formed for fabrication of mesa-stripe diode lasers based on epitaxially stacked tunnel-junction laser heterostructures. Mesa-stripe diode lasers with a 150 × 12-μm aperture have been manufactured on the basis of these structures. These samples have a threshold current density J th of 96 A cm-2, internal optical loss αi of 0.82 cm-1, and differential resistance R = 280 mΩ. Samples containing three laser structures have a slope efficiency of 3 W A-1 and a maximum peak output power of 250 W in the pulsed operation mode (100 ns, 1 kHz).
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Original Russian Text © D.A. Vinokurov, V.P. Konyaev, M.A. Ladugin, A.V. Lyutetskiy, A.A. Marmalyuk, A.A. Padalitsa, A.N. Petrunov, N.A. Pikhtin, V.A. Simakov, S.O. Slipchenko, A. V. Sukharev, N. V. Fetisova, V. V. Shamakhov, I.S. Tarasov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 2, pp. 251–255.
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Vinokurov, D.A., Konyaev, V.P., Ladugin, M.A. et al. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD. Semiconductors 44, 238–242 (2010). https://doi.org/10.1134/S1063782610020181
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DOI: https://doi.org/10.1134/S1063782610020181