Oxygen in Ge:Sn L. I. KhirunenkoYu. V. PomozovH. Riemann Atomic Structure and Nonelectronic Properties of Semiconductors 12 October 2010 Pages: 1253 - 1257
Mesoscopic variance of dislocation displacements in semiconductor crystals B. V. Petukhov Atomic Structure and Nonelectronic Properties of Semiconductors 12 October 2010 Pages: 1258 - 1262
Specific features of intervalley scattering of charge carriers in n-Si at high temperatures A. V. FedosovS. V. LuniovS. A. Fedosov Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1263 - 1265
Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field A. S. Kyuregyan Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1266 - 1274
Heat-transfer phenomena in alloys S. A. AlievR. I. Selim-zadeS. S. Ragimov Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1275 - 1279
On the nature of charge carrier scattering in Ag2Se at low temperatures M. B. Jafarov Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1280 - 1284
Repetition of the shape of the ultrafast self-modulation of the optical absorption spectrum upon varying the energy of pulse of GaAs pumping N. N. AgeevaI. L. BronevoiA. N. Krivonosov Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1285 - 1288
Spontaneous emission of holes excited by an electric field in germanium Ya. E. PokrovskiiN. A. Khvalkovskii Electrical and Optical Properties of Semiconductors 12 October 2010 Pages: 1289 - 1291
Differential capacitance of a semiconductor film D. E. TsurikovA. M. Yafyasov Semiconductor Structures, Interfaces, and Surfaces 12 October 2010 Pages: 1292 - 1296
Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films V. A. GergelA. V. Verhovtseva Semiconductor Structures, Interfaces, and Surfaces 12 October 2010 Pages: 1297 - 1300
Mixing of hole states in GaAs/AlAs(110) heterostructures V. N. Chernyshov Low-Dimensional Systems 12 October 2010 Pages: 1301 - 1307
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots E. S. ShatalinaS. A. BlokhinV. M. Ustinov Low-Dimensional Systems 12 October 2010 Pages: 1308 - 1312
Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments I. S. SbruevS. B. Sbruev Low-Dimensional Systems 12 October 2010 Pages: 1313 - 1320
Simulation of relaxation times and energy spectra of the CdTe/Hg1 − x Cd x Te/CdTe quantum well for variable valence band offset, well width, and composition x E. O. MelezhikJ. V. Gumenjuk-SichevskaF. F. Sizov Low-Dimensional Systems 12 October 2010 Pages: 1321 - 1327
Quantum spin Hall effect in nanostructures based on cadmium fluoride N. T. BagraevO. N. GuimbitskayaA. S. Shcheulin Low-Dimensional Systems 12 October 2010 Pages: 1328 - 1337
Formation of composite InGaN/GaN/InAlN quantum dots A. F. Tsatsul’nikovE. E. ZavarinM. Hytch Low-Dimensional Systems 12 October 2010 Pages: 1338 - 1341
The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon A. Yu. KarlachG. V. KuznetsovV. A. Skryshevsky Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 12 October 2010 Pages: 1342 - 1348
The structure and optical properties of nanocrytalline lead sulfide films S. I. SadovnikovN. S. KozhevnikovaA. A. Rempel Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 12 October 2010 Pages: 1349 - 1356
A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes N. Yu. GordeevI. I. NovikovA. R. Kovsh Physics of Semiconductor Devices 12 October 2010 Pages: 1357 - 1361
Recombination of charge carriers in the GaAs-based p-i-n diode G. I. AyzenshtatA. Y. YushenkoA. I. Toropov Physics of Semiconductor Devices 12 October 2010 Pages: 1362 - 1364
The temperature dependence of internal optical losses in semiconductor lasers (λ = 900–920 nm) N. A. PikhtinS. O. SlipchenkoI. S. Tarasov Physics of Semiconductor Devices 12 October 2010 Pages: 1365 - 1369
Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm) M. A. LaduginA. V. LyutetskiyI. S. Tarasov Physics of Semiconductor Devices 12 October 2010 Pages: 1370 - 1374
Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell L. A. KosyachenkoE. V. Grushko Physics of Semiconductor Devices 12 October 2010 Pages: 1375 - 1382
Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals A. A. WolfsonE. N. Mokhov Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1383 - 1385
Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface P. A. AlexandrovK. D. DemakovYu. Yu. Kuznetsov Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1386 - 1388
Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates A. A. LebedevA. M. Strel’chukA. V. Sadokhin Fabrication, Treatment, and Testing of Materials and Structures 12 October 2010 Pages: 1389 - 1391