Abstract
Multigraphene films grown by sublimation of the surface of semi-insulating 6H-SiC substrates in a vacuum have been studied. The films exhibit a semiconductor-type conductivity. A conclusion is made that this type of conduction is supposedly determined by defects present between separate graphene crystals constituting the carbon layers under study.
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Original Russian Text © A.A. Lebedev, A.M. Strel’chuk, D.V. Shamshur, G.A. Oganesyan, S.P. Lebedev, M.G. Mynbaeva, A.V. Sadokhin, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 10, pp. 1436–1438.
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Lebedev, A.A., Strel’chuk, A.M., Shamshur, D.V. et al. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates. Semiconductors 44, 1389–1391 (2010). https://doi.org/10.1134/S106378261010026X
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DOI: https://doi.org/10.1134/S106378261010026X