Wave front reversal by high-intensity pulsed optical excitation of ZnO A. N. Gruzintsev Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 269 - 274
Intracenter excited state of copper in Cu-compensated InP V. A. MelnikN. N. PribylovPh. V. Makarenko Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 275 - 277
Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity V. A. RomakaYu. V. StadnykT. I. Dominuk Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 278 - 284
Electrical and optical properties of InN with periodic metallic in insertions T. A. KomissarovaT. V. ShubinaY. Nanishi Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 285 - 288
Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light G. S. AltybaevS. E. KumekovA. A. Mahmudov Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 289 - 291
Recombination processes in pyrolytic cadmium sulfide films T. L. MaiorovaV. G. Klyuev Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 292 - 296
Ferromagnetism in diluted Pb1 − x − y Ge x Cr y Te magnetic semiconductors E. P. SkipetrovM. G. MikheevV. E. Slyn’ko Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 297 - 304
Features of the infrared reflection spectra of SmS semiconductor in the homogeneity range Yu. V. UlashkevichV. V. KaminskiA. V. Golubkov Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 305 - 309
Anomalous relaxation of photoconductivity in silicon at high excitation levels P. A. BorodovskiiA. F. BuldyginS. V. Golod Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 310 - 312
Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature D. N. LobanovA. V. NovikovP. Werner Electronic and Optical Properties of Semiconductors 11 March 2009 Pages: 313 - 317
Metal-insulator transition in n-3C-SiC epitaxial films A. A. LebedevP. L. AbramovM. O. Skvortsova Semiconductor Structures, Interfaces, and Surfaces 11 March 2009 Pages: 318 - 322
Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer S. P. Kozyrev Low-Dimensional Systems 11 March 2009 Pages: 323 - 330
Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites J. N. KulchinV. P. DzyubaA. V. Shcherbakov Low-Dimensional Systems 11 March 2009 Pages: 331 - 339
The spectrum and properties of the scattering cross section of electrons in open spherical quantum dots N. V. TkachJu. Seti Low-Dimensional Systems 11 March 2009 Pages: 340 - 346
Anti-stokes luminescence of Zn0.75Cd0.25S microcrystals annealed in the presence of oxygen O. V. OvchinnikovM. S. SmirnovD. V. Aseeva Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 March 2009 Pages: 347 - 351
Photostructural reconstructions of As-S and As-Se semiconductor glasses G. A. BordovskyS. A. NemovP. P. Seregin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 March 2009 Pages: 352 - 354
Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field B. M. KostishkoA. V. ZolotovYu. S. Nagornov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 March 2009 Pages: 355 - 358
Photoelectric and electrical properties of soluble polyphenylquinolines containing an oxygen or phenylamine bridge group between quinoline moieties E. L. AleksandrovaV. M. SvetlychnyiV. V. Kudryavtsev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 March 2009 Pages: 359 - 364
Spectra of charged defects in glassy Ge0.285Pb0.15S0.565 thin layers R. A. CastroV. A. BordovskyG. I. Grabko Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 11 March 2009 Pages: 365 - 367
Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface A. A. AkopyanKh. N. BachronovI. B. Mamontova Physics of Semiconductor Devices 11 March 2009 Pages: 368 - 373
Photoelectrochemical cells based on ternary compounds CuIn2n + 1Se3n + 2 (n = 3–6) V. Yu. RudYu. V. RudT. N. Ushakova Physics of Semiconductor Devices 11 March 2009 Pages: 374 - 378
Cd x Hg1 − x Te-based photodetector with the spectral characteristic controlled by the voltage N. J. Ismailov Physics of Semiconductor Devices 11 March 2009 Pages: 379 - 381
Effect of pump wave reflections on the excitation of a dual-wavelength vertical-cavity surface-emitting laser M. Yu. MorozovYu. A. MorozovV. V. Popov Physics of Semiconductor Devices 11 March 2009 Pages: 382 - 386
Dynamics of a multimode semiconductor laser with optical feedback I. V. Koryukin Physics of Semiconductor Devices 11 March 2009 Pages: 387 - 393
Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm A. L. ZakhgeimN. V. ZotovaA. E. Chernyakov Physics of Semiconductor Devices 11 March 2009 Pages: 394 - 399
Effect of the duration of the growth process on the properties of GaN grown by the sublimation method A. A. WolfsonE. N. Mokhov Fabrication, Treatment, and Testing of Materials and Structures 11 March 2009 Pages: 400 - 402
Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride I. A. BobrovnikovaI. V. IvoninV. V. Preobrazhenskii Fabrication, Treatment, and Testing of Materials and Structures 11 March 2009 Pages: 403 - 409