Abstract
A photodetector with a spectral characteristic of the photoresponse controlled by the bias voltage is realized on the basis of the Al-n-Cd x Hg1 − x Te heterostructure with a narrow insulator gap. The features of the spectral characteristic of the photocurrent are accounted for by the variation in the ratio between the surface and bulk components of the photocurrent upon varying the bias voltage. The possibility of simultaneous detection and control over the spectral characteristic of photosensitivity at the fundamental adsorption edge and in the short-wavelength spectral region is shown.
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Original Russian Text © N.J. Ismailov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 3, pp. 396–398.
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Ismailov, N.J. Cd x Hg1 − x Te-based photodetector with the spectral characteristic controlled by the voltage. Semiconductors 43, 379–381 (2009). https://doi.org/10.1134/S1063782609030221
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DOI: https://doi.org/10.1134/S1063782609030221