Semiconductor nanowhiskers: Synthesis, properties, and applications V. G. DubrovskiiG. E. CirlinV. M. Ustinov Review 12 December 2009 Pages: 1539 - 1584
Nernst-ettingshausen tensor in Sb2Te3 single crystal S. A. NemovG. L. TarantasovYu. V. Granatkina Electrical and Optical Properties of Semiconductors 12 December 2009 Pages: 1585 - 1589
Interaction of electrons with optical phonons localized in a quantum well J. PoželaK. PoželaV. S. Mikhrin Semiconductor Structures, Interfaces, and Surfaces 12 December 2009 Pages: 1590 - 1596
Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers A. V. SavelyevI. I. NovikovA. E. Zhukov Physics of Semiconductor Devices 12 December 2009 Pages: 1597 - 1601
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures A. V. LyutetskiyN. A. PikhtinI. S. Tarasov Physics of Semiconductor Devices 12 December 2009 Pages: 1602 - 1605
Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire Kh. Sh-o. KaltaevN. S. Sidel’nikovaA. T. Budnikov Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1606 - 1609
Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions P. V. SeredinA. V. GlotovI. S. Tarasov Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1610 - 1616
GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process V. N. NevedomskiiN. A. BertB. R. Semyagin Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1617 - 1621