Abstract
X-ray diffraction, scanning electron microscopy, and IR reflectance spectroscopy were used to study properties of epitaxial low-temperature hydride-MOCVD AlGaAs/GaAs (100) heterostructures. It was found that the variation in the AlGaAs alloy lattice’s parameter with Al content does not obey the classical Vegard’s law, and the lattice parameters are smaller than those of GaAs.
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Original Russian Text © P.V. Seredin, A.V. Glotov, E.P. Domashevskaya, I.N. Arsentyev, D.A. Vinokurov, A.L. Stankevich, I.S. Tarasov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 12, pp. 1654–1661.
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Seredin, P.V., Glotov, A.V., Domashevskaya, E.P. et al. Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions. Semiconductors 43, 1610–1616 (2009). https://doi.org/10.1134/S1063782609120070
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DOI: https://doi.org/10.1134/S1063782609120070