63Cu and 115In NMR study of CuInS2 semiconductor I. Kh. KhabibullinV. L. MatukhinE. V. Schmidt Atomic Structure and Nonelectronic Properties of Semiconductors 08 January 2009 Pages: 1 - 3
The effect of amorphization on the local structure of arsenic chalcogenides G. A. BordovskyA. V. MarchenkoE. I. Terukov Atomic Structure and Nonelectronic Properties of Semiconductors 08 January 2009 Pages: 4 - 6
Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity V. A. RomakaD. FruchartL. G. Akselrud Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 7 - 13
Apparent low-frequency charge capacitance of semiconducting boron O. A. TsagareishviliL. S. ChkhartishviliD. L. Gabunia Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 14 - 20
Structural and luminescent properties of ZnO:P films produced by annealing ZnP2 wafers in atomic oxygen I. V. Rogozin Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 21 - 25
IR luminescence in thermally treated silicon V. V. BolotovV. E. Kang Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 26 - 28
Photosensitivity of the Ni-n-GaAs Schottky barriers D. MelebaevG. D. MelebaevaYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 29 - 32
Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limit N. A. TorkhovV. G. BozhkovaV. A. Novikov Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 33 - 41
Transmission of hot electrons through a metal-semiconductor interface F. V. KharlamovV. F. Kharlamov Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 42 - 46
The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field S. H. ShamirzaevG. GulyamovA. G. Gulyamov Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 47 - 51
Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer I. E. TyschenkoM. VoelskowV. P. Popov Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 52 - 56
Radiative recombination in the CdMgTe matrix with ultrathin narrow-gap CdMnTe layers V. F. AgekyanA. Yu. SerovG. Karczewski Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 57 - 62
Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE R. Kh. AkchurinA. Yu. AndreevA. V. Sukharev Low-Dimensional Systems 08 January 2009 Pages: 63 - 68
Hysteresis of giant intensity fluctuations of emission for two-dimensional electrons in the conditions for the integer quantum Hall effect A. L. ParakhonskyM. V. LebedevI. V. Kukushkin Low-Dimensional Systems 08 January 2009 Pages: 69 - 74
Quantum Hall effect in (cadmium flouride)-based nanostructures N. T. BagraevO. N. GimbitskayaA. S. Shcheulin Low-Dimensional Systems 08 January 2009 Pages: 75 - 77
Spin transistor based on cadmium fluoride nanostructures N. T. BagraevO. N. GimbitskayaA. S. Shcheulin Low-Dimensional Systems 08 January 2009 Pages: 78 - 87
The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching D. F. TimokhovF. P. Timokhov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 88 - 91
Effect of halogens on the formation and properties of the porous silicon layers V. V. BolotovYu. A. Sten’kinI. V. Ponomareva Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 92 - 95
Microstructure and optical properties of In2S3 films produced by thermal evaporation O. V. GoncharovaV. F. Gremenok Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 96 - 101
Conductivity of the opal-VO2 composite at the semiconductor-metal phase transition E. B. ShadrinD. A. KurdyukovV. G. Golubev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 102 - 104
Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models A. V. KlimovaM. V. LukashinA. B. Pashkovskii Physics of Semiconductor Devices 08 January 2009 Pages: 105 - 111
Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures S. O. SlipchenkoA. D. BondarevI. S. Tarasov Physics of Semiconductor Devices 08 January 2009 Pages: 112 - 116
Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures N. S. AverkievA. P. AstakhovaYu. P. Yakovlev Physics of Semiconductor Devices 08 January 2009 Pages: 117 - 120
Numerical simulation of the process of hydrogenation of GaAs V. A. KagadeiE. V. Nefyodtsev Fabrication, Treatment, and Testing of Materials and Structures 08 January 2009 Pages: 121 - 129