Abstract
Near-edge IR luminescence with peak emission at E = 1.084 eV has been studied in n- and p-type silicon samples with different contents of interstitial oxygen under excitation with a Nd: YAG laser diode. Thermal treatments of the samples demonstrated that the luminescence nearly completely disappears upon thermal treatments at T = 1050°C and is partly restored in two stages in subsequent thermal treatments in the temperature range 550–800°C. The temperature intervals of luminescence quenching and restoration (500–600 and 700–800°C) correlate with the temperature ranges of dissolution for shallow oxygen precipitates (1000°C) and the generation of oxygen-containing thermal defects, the so-called thermal donors of types I and II. The data obtained suggest that the electronic states related to thermal donors are traps for nonequilibrium carriers and the emptying of these traps contributes to the near-edge emission.
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References
W. Kaiser, Phys. Rev. 105, 1751 (1957).
C. S. Fuller, J. A. Ditzenberger, N. B. Hannay, and E. Buehler, Phys. Rev. A 96, 833 (1955).
J. R. Patel, in Semiconductor Silicon 1981, Ed. by H. R. Huff, R. J. Kriegler and Y. Takeishi (Electrochemical Society, Pennington, 1981), p. 189.
J. R. Patel, K. A. Jackson, and H. Reiss, J. Appl. Phys. 48, 5279 (1977).
Y. Tokuda and N. Kobayashi, J. Appl. Phys. 66, 3651 (1989).
Y. Kamiura, F. Hashimoto, and M. Yoneta, J. Appl. Phys. 66, 3926 (1989).
S. Binetti, S. Pizzini, E. Leoni, et al., J. Appl. Phys. 92, 2437 (2002).
A. Castaldini, D. Cavalcoli, A. Cavallini, and S. Pizzini, Phys. Status Solidi A 202, 889 (2005).
E. Leoni, S. Binetti, B. Pichaud, and S. Pizzini, Eur. Phys. J. Appl. Phys. 27, 123 (2004).
V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in the Bulk and at the Surface of Silicon (Nauka, Moscow, 1990), p. 28 [in Russian].
V. Cazcarra and P. Zunino, J. Appl. Phys. 51, 4206 (1980).
I. P. Varshni, in Radiative Recombination in Semiconductors, Ed. by Ya. E. Pokrovsky (Nauka, Moscow, 1972), p. 9 [in Russian].
N. A. Sobolev, A. M. Emel’yanov, V. V. Zabrodsky, et al., Fiz. Tekh. Poluprovodn. 41, 635 (2007) [Semiconductors 41, 616 (2007)].
P. E. Wei, K. F. Kelton, and R. Falster, J. Appl. Phys. 88, 5062 (2000).
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Original Russian Text © V.V. Bolotov, V.E. Kang, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 1, pp. 31–33.