Electrical conductivity and thermoelectric power of liquid tellurium doped with 3d transition metals V. M. SklyarchukYu. O. Plevachuk Electronic and Optical Properties of Semiconductors Pages: 1365 - 1368
Hg1−x−y−z CdxMnyZnzTe: A new alternative to Hg1−x CdxTe I. N. GorbatyukA. V. MarkovI. M. Rarenko Electronic and Optical Properties of Semiconductors Pages: 1369 - 1373
Stimulated and spontaneous emission of CdxHg1−x Te structures in the range 3.2–3.7 µm at 77 K Yu. N. NozdrinA. V. Okomel’kovN. D. Grishnova Electronic and Optical Properties of Semiconductors Pages: 1374 - 1377
Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs V. F. KovalenkoS. V. Shutov Electronic and Optical Properties of Semiconductors Pages: 1378 - 1380
Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures S. V. SlobodchikovE. V. RussuKh. M. Salikhov Semiconductor Structures, Interfaces, and Surfaces Pages: 1381 - 1383
Photoreflection studies of band offsets at the heterojunction in strained short-period GaAs/GaAsP superlattices L. P. AvakyantsP. Yu. BokovA. V. Chervyako Semiconductor Structures, Interfaces, and Surfaces Pages: 1384 - 1389
Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures V. A. TerekhovA. N. Man’koÉ. P. Domashevskaya Semiconductor Structures, Interfaces, and Surfaces Pages: 1390 - 1393
Traps with near-midgap energies at the bonded Si/SiO2 interface in silicon-on-insulator structures I. V. AntonovaV. P. PopovA. I. Rukovishnikov Semiconductor Structures, Interfaces, and Surfaces Pages: 1394 - 1399
Kinetics of the growth of an amorphous layer at the surface of silicon bombarded with fast heavy ions at low temperatures A. Yu. Azarov Semiconductor Structures, Interfaces, and Surfaces Pages: 1400 - 1401
Formation and optical properties of CuInSe2x Te2(1−x) nanoparticles in a silicate glass matrix I. V. Bodnar’N. P. SoloveiA. P. Molochko Low-Dimensional Systems Pages: 1402 - 1408
Intersubband absorption of light in selectively doped asymmetric double tunnel-coupled quantum wells V. L. ZerovaV. V. KapaevE. Towe Low-Dimensional Systems Pages: 1409 - 1415
Size distribution of cobalt nanoclusters in an amorphous carbon matrix V. I. Ivanov-OmskiiA. V. KolobovS. G. Yastrebov Amorphous, Vitreous, and Porous Semiconductors Pages: 1416 - 1418
Infrared light-emitting diodes based on GaInAsSb solid solutions grown from lead-containing solution-melts A. P. AstakhovaE. A. GrebenshchikovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 1419 - 1425
Luminescence properties of cylindrical ZnO microcavities A. N. GruzintsevV. T. VolkovE. E. Yakimov Physics of Semiconductor Devices Pages: 1426 - 1429
Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures S. O. SlipchenkoD. A. VinokurovZh. I. Alferov Physics of Semiconductor Devices Pages: 1430 - 1439