Abstract
The dependence of the photoluminescence spectrum of electron-hole plasma in semi-insulating undoped GaAs on the concentration of the background carbon impurity N C(3×1015 cm−3≤N C≤4×1016 cm−3) is studied at 77 K. It is established that the density of the electron-hole plasma, which is equal to n e−h ≈1.1×1016 cm−3 in crystals with the lowest impurity concentration at an excitation intensity of 6×1022 photons/(cm2 s), decreases considerably as the value of N C increases in the range mentioned above. A decrease in the density of the electron-hole plasma with increasing N C is attributed to the effect of fluctuations in the carbon concentration N C, which give rise to a nonuniform distribution of interacting charge carriers and to localization of holes in the tails of the density of states of the valence band.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1423–1425.
Original Russian Text Copyright © 2004 by Kovalenko, Shutov.
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Kovalenko, V.F., Shutov, S.V. Photoluminescence of electron-hole plasma in semi-insulating undoped GaAs. Semiconductors 38, 1378–1380 (2004). https://doi.org/10.1134/1.1836055
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DOI: https://doi.org/10.1134/1.1836055