INTAS-RFBR Seminar on rare-earth impurities in semiconductors and low-dimensional semiconductor structures, St. Petersburg State Technical University, October 26, 1998: Opening address B. P. Zakharchenya OriginalPaper Pages: 595 - 595
Erbium-doped silicon epilayers grown by liquid-phase epitaxy S. BinettiS. PizziniB. Fraboni OriginalPaper Pages: 596 - 597
Photoluminescence of erbium-doped silicon: Excitation power dependence C. A. J. AmmerlaanD. T. X. ThaoN. A. Sobolev OriginalPaper Pages: 598 - 602
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium V. V. EmtsevV. V. Emtsev Jr.L. C. Kimerling OriginalPaper Pages: 603 - 605
Redistribution of erbium during the crystallization of buried amorphous silicon layers O. V. AleksandrovYu. A. NikolaevYu. A. Kudryavtsev OriginalPaper Pages: 606 - 609
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon N. A. SobolevE. I. ShekT. G. Yugova OriginalPaper Pages: 610 - 612
Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures N. A. SobolevYu. A. NikolaevV. I. Vdovin OriginalPaper Pages: 613 - 615
Mechanisms of excitation of the f-f emission in silicon codoped with erbium and oxygen V. F. MasterovL. G. Gerchikov OriginalPaper Pages: 616 - 621
Mechanism of erbium electroluminescence in hydrogenated amorph silicon M. S. BreslerO. B. GusevI. N. Yassievich OriginalPaper Pages: 622 - 623
Effect of annealing on the optical and structural properties of GaN:Er N. A. SobolevV. V. LundinA. M. Emel’yanov OriginalPaper Pages: 624 - 626
Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures A. A. GippiusV. M. KonnovV. V. Ushakov OriginalPaper Pages: 627 - 629
Photothermoacoustic and photoelectric microscopy of silicon R. M. BurbeloA. G. Kuz’michI. Ya. Kucherov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 630 - 635
Radiation-thermal activation of silicon implanted in gallium arsenide V. M. ArdyshevA. P. Surzhikov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 636 - 639
Photoionization of short-range acceptor states in uniaxially deformed semiconductors A. A. AbramovV. N. TulupenkoD. A. Firsov Electronic and Optical Properties of Semiconductors Pages: 640 - 644
Electric and luminescence properties of GaAs-AIIBIVC 2 V single crystals I. K. PolushinaYu. V. Rud’V. Yu. Rud’ Electronic and Optical Properties of Semiconductors Pages: 645 - 647
Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors I. I. LyapilinKh. M. Bikkin Electronic and Optical Properties of Semiconductors Pages: 648 - 653
Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures D. V. VyalykhS. I. Fedoseenko Semiconductor Structures, Interfaces and Surfaces Pages: 654 - 657
Reconstruction and electron states of a Ga2Se3-GaAs heterointerface B. L. AgapovN. N. BezryadinI. N. Arsent’ev Semiconductor Structures, Interfaces and Surfaces Pages: 658 - 661
Sulfide passivation of GaAs power diodes V. M. BotnaryukYu. V. ZhilyaevE. V. Konenkova Semiconductor Structures, Interfaces and Surfaces Pages: 662 - 664
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor N. N. BezryadinÉ. P. DomashevskayaI. N. Arsent’ev Semiconductor Structures, Interfaces and Surfaces Pages: 665 - 667
Deep-level recombination spectroscopy in GaP light-emitting diodes S. V. BulyarskiiM. O. Vorob’evA. V. Lakalin Semiconductor Structures, Interfaces and Surfaces Pages: 668 - 671
Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures M. V. BelousA. M. GenkinV. K. Genkina Semiconductor Structures, Interfaces and Surfaces Pages: 672 - 676
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy G. É. TsyrlinV. N. PetrovA. O. Golubok Low-Dimensional Systems Pages: 677 - 680
Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition V. F. SapegaV. I. Perel’K. Eberl Low-Dimensional Systems Pages: 681 - 683
Effect of substrate material on the rate of growth and the optical parameters of a-C:H layers T. K. ZvonarevaL. V. Sharonova Amorphous, Glassy, and Porous Semiconductors Pages: 684 - 688
Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light V. Yu. Rud’Yu. V. Rud’V. P. Khvostikov The Physics of Semiconductor Devices Pages: 689 - 692
Increasing the power of broad-waveguide lasers by additional selection of transverse modes I. A. KostkoV. P. EvtikhievG. G. Zegrya The Physics of Semiconductor Devices Pages: 693 - 699
Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers M. AidaralievN. V. ZotovaG. N. Talalakin The Physics of Semiconductor Devices Pages: 700 - 703