Abstract
Deep-level parameters determined from an analysis of the differential coefficients of the forward-bias current-voltage curves are compared in the example of commercial GaP LEDs. It is shown that these parameters are suitable for deep-center diagnostics. The proposed measurements can be performed on semiconductor wafers in the industrial environment without sealing or dividing into individual crystals.
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Fiz. Tekh. Poluprovodn. 33, 723–726 (June 1999)
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Bulyarskii, S.V., Vorob’ev, M.O., Grushko, N.S. et al. Deep-level recombination spectroscopy in GaP light-emitting diodes. Semiconductors 33, 668–671 (1999). https://doi.org/10.1134/1.1187753
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DOI: https://doi.org/10.1134/1.1187753