Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing V. M. ArdyshevM. V. Ardyshev Atmoic Structure and Non-Electronic Properties of Semiconductors Pages: 1029 - 1032
Equilibrium of native point defects in tin dioxide K. P. BogdanovD. Ts. DimitrovYu. M. Tairov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1033 - 1035
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy V. V. ChaldyshevV. V. PreobrazhenskiiP. Werner Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1036 - 1039
Photoconductivity of copper-compensated gallium phosphide N. N. PribylovS. I. RembezaS. A. Sushkov Electronic and Optical Properties of Semiconductors Pages: 1040 - 1043
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters P. N. BrunkovV. V. ChaldyshevB. R. Semyagin Electronic and Optical Properties of Semiconductors Pages: 1044 - 1047
Study of GaN thin layers subjected to high-temperature rapid thermal annealing N. I. KatsavetsG. M. LawsC. T. Foxon Electronic and Optical Properties of Semiconductors Pages: 1048 - 1053
Nitrogen divacancies — The possible cause of the “yellow band” in the luminescence spectra of GaN A. É. Yunovich Electronic and Optical Properties of Semiconductors Pages: 1054 - 1056
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy K. S. ZhuravlevT. S. ShamirzaevI. P. Petrenko Electronic and Optical Properties of Semiconductors Pages: 1057 - 1061
Effect of In doping on the kinetic coefficients in solid solutions of the system PbzSn1−z )0.95Ge0.05Te S. A. NemovV. I. ProshinS. M. Nakhmanson Electronic and Optical Properties of Semiconductors Pages: 1062 - 1064
Differential methods for determination of deep-level parameters from recombination currents of p-n junctions S. V. BulyarskiiN. S. GrushkoA. V. Lakalin Electronic and Optical Properties of Semiconductors Pages: 1065 - 1068
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields V. N. Tulupenko Electronic and Optical Properties of Semiconductors Pages: 1069 - 1071
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors P. G. Lukashevich Electronic and Optical Properties of Semiconductors Pages: 1072 - 1074
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment V. F. AgekyanV. I. Ivanov-OmskiiV. Yu. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1075 - 1076
Photoelectric properties of GaN/GaP heterostructures V. M. BotnaryukS. D. RaevskiiV. Yu. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1077 - 1079
Photoluminescence of the space charge region of metal-zinc selenide contacts V. P. MakhniiM. M. Sletov Semiconductor Structures, Interfaces, and Surfaces Pages: 1080 - 1081
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures V. N. OvsyukM. A. Dem’yanenkoA. I. Toropov Semiconductor Structures, Interfaces, and Surfaces Pages: 1082 - 1086
Weak localization in p-type quantum wells N. S. AverkievL. E. GolubG. E. Pikus Low-Dimensional Systems Pages: 1087 - 1095
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots P. N. BrunkovA. A. SuvorovaP. S. Main Low-Dimensional Systems Pages: 1096 - 1100
Electron-hole Coulomb interaction in InGaN quantum dots V. E. BugrovO. V. Konstantinov Low-Dimensional Systems Pages: 1101 - 1105
Shallow acceptors in strained multiquantum-well Ge/Ge1−x Six heterostructures V. Ya. AleshkinV. I. GavrilenkoO. A. Kuznetsov Low-Dimensional Systems Pages: 1106 - 1110
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier Yu. PozhelaK. Pozhela Low-Dimensional Systems Pages: 1111 - 1115
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients N. S. AverkievA. M. MonakhovP. M. Koenraad Low-Dimensional Systems Pages: 1116 - 1118
Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy V. Ya. AleshkinB. N. ZvonkovD. O. Filatov Low-Dimensional Systems Pages: 1119 - 1124
Doping and impurity compensation by ion implantation in a-SiGe films A. V. ErshovA. I. MashinA. F. Khokhlov Amorphous, Glassy, and Porous Semiconductors Pages: 1125 - 1127
Long-term structural relaxation and photoinduced degradation in a-Si: H K. V. KougiaA. B. Pevtsov Amorphous, Glassy, and Porous Semiconductors Pages: 1128 - 1130
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon K. V. KougiaE. I. TerukovV. Fus Amorphous, Glassy, and Porous Semiconductors Pages: 1131 - 1133
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures I. A. KurovaN. N. OrmontM. M. Kazanin Amorphous, Glassy, and Porous Semiconductors Pages: 1134 - 1136
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers S. V. IvanovA. A. ToropovG. Landwehr Physics of Semiconductor Devices Pages: 1137 - 1140