Abstract
Far infrared photoconductivity spectra due to excitation of shallow acceptors in strained multiquantum well Ge/Ge1−x Six (x≈0.1) heterostuctures are investigated. It is shown that these spectra are shifted toward longer wavelengths in the far infrared region compared with those of bulk p-Ge, owing to “built-in” strain and size quantization, which lead to splitting of the light-and heavy-hole subbands in the Ge layers. Shallow acceptor spectra are calculated variationally for bulk germanium under uniaxial tension, which is “equivalent” to the strained Ge layers in the heterostructures. Although this method is only appropriate for wide quantum wells (d Ge≈800 Å), the calculations are shown to qualitatively account for photoconductivity spectra obtained from narrower wells (d Ge≈200 Å) as well.
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Fiz. Tekh. Poluprovodn. 32, 1240–1245 (October 1998)
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Aleshkin, V.Y., Gavrilenko, V.I., Erofeeva, I.V. et al. Shallow acceptors in strained multiquantum-well Ge/Ge1−x Six heterostructures. Semiconductors 32, 1106–1110 (1998). https://doi.org/10.1134/1.1187577
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DOI: https://doi.org/10.1134/1.1187577