Electronic materials

ISSN: 0022-2461 (Print) 1573-4803 (Online)

In this topical collection (291 articles)

Page of 15

  1. No Access

    Electronic materials

    Bandgap engineering and enhancing photovoltaic effect in NBT–BNT–xNd lead-free ceramics

    Chuilei Wang, Yu Huan, Limin Hou, Yilong Liu, Xinjian Wang… Pages 1486-1497

  2. Electronic materials

    Wearable humidity sensor embroidered on a commercial face mask and its electrical properties

    Ankita Sinha, Adrian K. Stavrakis, Mitar Simić… Pages 1680-1693
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  3. Electronic materials

    Optical, structural and morphological studies of nanostructures fabricated on silicon surface by femtosecond laser irradiation

    R. Kuladeep, L. Jyothi, Chakradhar Sahoo, D. Narayana Rao… Pages 1863-1880
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  4. Electronic materials

    Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

    Wenran Feng, Zhen Li, Yingying Chen, Jinyang Chen… Pages 1881-1889
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  5. Electronic materials

    Microstructure dependence of magnetization mechanisms in Co-Fe thick films

    María del Carmen Aguirre, Silvia E. Urreta… Pages 1890-1901
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  6. Electronic materials

    Dispersing solvent effect on halide perovskite nanocrystals-based films and devices

    Fang Chen, Yanliang Liu, Marco Salerno Pages 1902-1913
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  7. Electronic materials

    Effect of annealing temperature on the performance of water motion energy harvesting in n-type silicon thin film by magnetron sputtering

    Hanyu Yao, Lei Wang, Xin Chen, Yuwei Jiang, Yushuang Liu… Pages 1914-1922
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  8. Electronic materials

    Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

    Imrich Gablech, Jan Brodský, Petr Vyroubal, Jakub Piastek… Pages 1923-1935
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  9. Electronic materials

    Simple preparation of highly efficient MAxFA1−xPbI3 perovskite films from an aqueous halide-free lead precursor by all dip-coating approach and application in high-performance perovskite solar cells

    Zobia Irshad, Muhammad Adnan, Jae Kwan Lee Pages 1936-1946
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  10. No Access

    Electronic materials

    High-performance photodetector based on ReS2/WSe2/Te dual van der Waals heterojunctions

    Shuailong Wang, Yuanbo Wen, Yaxin Zhan, Zhangting Wu… Pages 2024-2034

  11. No Access

    Electronic materials

    Phase and stoichiometry control in superconducting FeSe layers on SrTiO3

    Maria Hilse, Forrest Brown, Joseph Roth, Simon Munyan… Pages 2035-2047

  12. Electronic materials

    Highly thermally conductive and flexible reduced graphene oxide films produced using two-step liquid-phase repairing method with hydriodic acid

    Jing Li, Jinshui Liu, Hongxing Zhang, Ning Li… Pages 2209-2221
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  13. No Access

    Electronic materials

    Strain effects of stability, transport, and electro-optical properties of novel Ga2TeS monolayer

    Huabing Shu, Jiyuan Guo Pages 2403-2415

  14. No Access

    Electronic materials

    Effect of Ge content on diode parameters of superstrate type Cu2ZnSn1−xGexS4/CdS heterostructures prepared by all-solution process

    D. Mora-Herrera, Mou Pal Pages 2416-2436

  15. No Access

    Electronic materials

    In-situ vertical growth of integrated CuO@Cu electrode for enhanced Li-ion storage kinetics

    Peng Bai, Wenhua Tian, Zihan Wang, Guoqiang Ling, Jing Ren… Pages 2437-2448

  16. Electronic materials

    Construction of g-C3N4 nanoparticles modified TiO2 nanotube arrays with Z-scheme heterojunction for enhanced photoelectrochemical properties

    Fengling Zhang, Jianxing Liu, Hongrui Yue, Gongjin Cheng… Pages 2676-2688
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  17. Electronic materials

    Black phosphorus unipolar transistor, memory, and photodetector

    Arun Kumar, Loredana Viscardi, Enver Faella… Pages 2689-2699
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  18. Electronic materials

    Double perovskite Cs2AgBiBr6 radiation sensor: synthesis and characterization of single crystals

    Valeria Murgulov, Catherine Schweinle, Michael Daub… Pages 2758-2774
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  19. No Access

    Electronic materials

    Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns

    Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao… Pages 2974-2987

  20. No Access

    Electronic materials

    Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films

    Minsoo Kim, Jong Yeog Son Pages 2988-2997
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